PartNumber | PHKD3NQ10T,518 | PHKD13N03LT,518 | PHKD13N03LT,118 |
Description | MOSFET PHKD3NQ10T/SO8/REEL13DP | RF Bipolar Transistors MOSFET MOSFET N-CH TRENCH DL 30V | MOSFET 2N-CH 30V 10.4A 8SOIC |
Manufacturer | NXP Semiconductors | NXP Semiconductors | - |
Product Category | FETs - Arrays | FETs - Arrays | - |
Series | TrenchMOS | TrenchMOS | - |
Packaging | Tape & Reel (TR) | Tape & Reel (TR) | - |
Package Case | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | - |
Operating Temperature | -65°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | - |
Mounting Type | Surface Mount | Surface Mount | - |
Supplier Device Package | 8-SO | 8-SO | - |
FET Type | 2 N-Channel (Dual) | 2 N-Channel (Dual) | - |
Power Max | 2W | 3.57W | - |
Drain to Source Voltage Vdss | 100V | 30V | - |
Input Capacitance Ciss Vds | 633pF @ 20V | 752pF @ 15V | - |
FET Feature | Logic Level Gate | Logic Level Gate | - |
Current Continuous Drain Id 25°C | 3A | 10.4A | - |
Rds On Max Id Vgs | 90 mOhm @ 1.5A, 10V | 20 mOhm @ 8A, 10V | - |
Vgs th Max Id | 4V @ 1mA | 2V @ 250μA | - |
Gate Charge Qg Vgs | 21nC @ 10V | 10.7nC @ 5V | - |