PHPT60603N

PHPT60603NYX vs PHPT60603NY vs PHPT60603NY115

 
PartNumberPHPT60603NYXPHPT60603NYPHPT60603NY115
DescriptionBipolar Transistors - BJT NPN High Power BipolarTransistorNow Nexperia PHPT60603NY - Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, MO-235, Plastic/Epoxy, 4 Pin
ManufacturerNexperia--
Product CategoryBipolar Transistors - BJT--
RoHSE--
Mounting StyleSMD/SMT--
Package / CaseLFPAK56-5--
Transistor PolarityNPN--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max60 V--
Collector Base Voltage VCBO60 V--
Emitter Base Voltage VEBO7 V--
Collector Emitter Saturation Voltage70 mV--
Maximum DC Collector Current3 A--
Gain Bandwidth Product fT140 MHz--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
DC Current Gain hFE Max400--
PackagingReel--
BrandNexperia--
Continuous Collector Current3 A--
DC Collector/Base Gain hfe Min200--
Pd Power Dissipation25 W--
Product TypeBJTs - Bipolar Transistors--
QualificationAEC-Q101--
Factory Pack Quantity1500--
SubcategoryTransistors--
Unit Weight0.002335 oz--
Manufacturer Part # Description RFQ
Nexperia
Nexperia
PHPT60603NYX Bipolar Transistors - BJT NPN High Power BipolarTransistor
PHPT60603NYX Bipolar Transistors - BJT NPN High Power BipolarTransisto
PHPT60603NY New and Original
PHPT60603NY115 Now Nexperia PHPT60603NY - Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, MO-235, Plastic/Epoxy, 4 Pin
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