PMDPB30

PMDPB30XN,115 vs PMDPB30XN vs PMDPB30XN , HN2V02H

 
PartNumberPMDPB30XN,115PMDPB30XNPMDPB30XN , HN2V02H
DescriptionMOSFET PMDPB30XN/HUSON6/REEL 7" Q1/T1MOSFET, DUAL N-CH, 20V, DFN2020
ManufacturerNexperiaNXP Semiconductors-
Product CategoryMOSFETFETs - Arrays-
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseDFN-2020-6--
Number of Channels2 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current5.3 A--
Rds On Drain Source Resistance30 mOhms--
Vgs th Gate Source Threshold Voltage650 mV--
Qg Gate Charge14.4 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation8.33 W--
ConfigurationDual--
Channel ModeEnhancement--
PackagingReelDigi-ReelR Alternate Packaging-
Transistor Type2 N-Channel--
BrandNexperia--
Fall Time16 ns--
Product TypeMOSFET--
Rise Time15 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time4 ns--
Typical Turn On Delay Time40 ns--
Unit Weight0.000254 oz--
Series---
Package Case-6-UDFN Exposed Pad-
Operating Temperature--55°C ~ 150°C (TJ)-
Mounting Type-Surface Mount-
Supplier Device Package-6-HUSON (2x2)-
FET Type-2 N-Channel (Dual)-
Power Max-490mW-
Drain to Source Voltage Vdss-20V-
Input Capacitance Ciss Vds-660pF @ 10V-
FET Feature-Logic Level Gate-
Current Continuous Drain Id 25°C-4A-
Rds On Max Id Vgs-40 mOhm @ 3A, 4.5V-
Vgs th Max Id-900mV @ 250μA-
Gate Charge Qg Vgs-21.7nC @ 4.5V-
Manufacturer Part # Description RFQ
Nexperia
Nexperia
PMDPB30XN,115 MOSFET PMDPB30XN/HUSON6/REEL 7" Q1/T1
PMDPB30XN,115 MOSFET 2N-CH 20V 4A 6HUSON
PMDPB30XN MOSFET, DUAL N-CH, 20V, DFN2020
PMDPB30XN , HN2V02H New and Original
PMDPB30XN115 - Bulk (Alt: PMDPB30XN115)
PMDPB30XN,115-CUT TAPE New and Original
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