PMDPB5

PMDPB58UPE,115 vs PMDPB55XP,115 vs PMDPB56XNEAX

 
PartNumberPMDPB58UPE,115PMDPB55XP,115PMDPB56XNEAX
DescriptionMOSFET 20V, Dual P-Channel Trench MOSFETMOSFET 20V, Dual P-Channel Trench MOSFETMOSFET 2N-CH 30V 3.1A DFN2020D-6
ManufacturerNexperiaNexperia-
Product CategoryMOSFETMOSFET-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseDFN-2020-6DFN-2020-6-
Number of Channels2 Channel2 Channel-
Transistor PolarityP-ChannelP-Channel-
Vds Drain Source Breakdown Voltage20 V20 V-
Id Continuous Drain Current4.5 A4.5 A-
Rds On Drain Source Resistance58 mOhms, 58 mOhms55 mOhms-
Vgs th Gate Source Threshold Voltage950 mV650 mV-
Vgs Gate Source Voltage8 V--
Qg Gate Charge9.5 nC, 9.5 nC16.5 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation1.21 W8.3 W-
ConfigurationDualDual-
Channel ModeEnhancementEnhancement-
PackagingReelReel-
Transistor Type2 P-Channel2 P-Channel-
BrandNexperiaNexperia-
Forward Transconductance Min9 S, 9 S--
Fall Time14 ns, 14 ns68 ns-
Product TypeMOSFETMOSFET-
Rise Time15 ns, 15 ns14 ns-
Factory Pack Quantity30003000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time41 ns, 41 ns135 ns-
Typical Turn On Delay Time7 ns, 7 ns4 ns-
Unit Weight-0.000254 oz-
Manufacturer Part # Description RFQ
Nexperia
Nexperia
PMDPB58UPE,115 MOSFET 20V, Dual P-Channel Trench MOSFET
PMDPB55XP,115 MOSFET 20V, Dual P-Channel Trench MOSFET
PMDPB56XNEAX MOSFET 2N-CH 30V 3.1A DFN2020D-6
PMDPB58UPE,115 MOSFET 2P-CH 20V 3.6A HUSON6
PMDPB55XP,115 IGBT Transistors MOSFET 20V, Dual P-Channel Trench MOSFET
PMDPB55XP New and Original
PMDPB56XN New and Original
PMDPB56XN115 - Bulk (Alt: PMDPB56XN115)
PMDPB58UPE PB-FREE New and Original
PMDPB58UPE115 New and Original
PMDPB58UPE15 New and Original
PMDPB58UPE New and Original
NXP Semiconductors
NXP Semiconductors
PMDPB56XN,115 IGBT Transistors MOSFET 20V, N-Channel Trench MOSFET
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