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| PartNumber | PMDPB85UPE,115 | PMDPB80XP,115 |
| Description | MOSFET PMDPB85UPE/HUSON6/REEL 7" Q1/T | MOSFET 20V, Dual P-Channel Trench MOSFET |
| Manufacturer | Nexperia | Nexperia |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | - |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | DFN-2020-6 | DFN-2020-6 |
| Number of Channels | 2 Channel | 2 Channel |
| Transistor Polarity | P-Channel | P-Channel |
| Vds Drain Source Breakdown Voltage | 20 V | 20 V |
| Id Continuous Drain Current | 3.7 A | 3.7 A |
| Rds On Drain Source Resistance | 82 mOhms, 82 mOhms | 80 mOhms |
| Vgs th Gate Source Threshold Voltage | 950 mV | 600 mV |
| Vgs Gate Source Voltage | 8 V | - |
| Qg Gate Charge | 8.1 nC, 8.1 nC | 5.7 nC |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Pd Power Dissipation | 1.17 W | 6.25 W |
| Configuration | Dual | Dual |
| Channel Mode | Enhancement | Enhancement |
| Packaging | Reel | Reel |
| Transistor Type | 2 P-Channel | 2 P-Channel |
| Brand | Nexperia | Nexperia |
| Forward Transconductance Min | 6 S, 6 S | - |
| Fall Time | 21 ns, 21 ns | 50 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 12 ns | 14 ns |
| Factory Pack Quantity | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 47 ns, 47 ns | 120 ns |
| Typical Turn On Delay Time | 6 ns, 6 ns | 6 ns |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Nexperia |
PMDPB85UPE,115 | MOSFET PMDPB85UPE/HUSON6/REEL 7" Q1/T | |
| PMDPB80XP,115 | MOSFET 20V, Dual P-Channel Trench MOSFET | ||
| PMDPB85UPE,115 | MOSFET 2P-CH 20V 2.9A 6HUSON | ||
| PMDPB80XP,115 | MOSFET 20V, Dual P-Channel Trench MOSFET | ||
| PMDPB80XP115 | Now Nexperia PMDPB80XP - Small Signal Field-Effect Transistor, HUSON6 | ||
| PMDPB85UPE | New and Original | ||
| PMDPB85UPE115 | - Bulk (Alt: PMDPB85UPE115) |