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| PartNumber | PMDT290UNE,115 | PMDT290UNEYL |
| Description | MOSFET 20V 800 MA DUAL N-CH TRENCH MOSFET | MOSFET PMDT290UNE/SOT666/SOT6 |
| Manufacturer | Nexperia | Nexperia |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | - |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | SOT-666-6 | SOT-666-6 |
| Number of Channels | 2 Channel | 2 Channel |
| Transistor Polarity | N-Channel | N-Channel, NPN |
| Vds Drain Source Breakdown Voltage | 20 V | 20 V |
| Id Continuous Drain Current | 800 mA | 800 mA |
| Rds On Drain Source Resistance | 380 mOhms | 290 mOhms |
| Vgs th Gate Source Threshold Voltage | 500 mV | 500 mV |
| Vgs Gate Source Voltage | 4.5 V | 4.5 V |
| Qg Gate Charge | 0.45 nC | 0.45 nC |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Pd Power Dissipation | 390 mW | 500 mW |
| Configuration | Dual | Dual |
| Channel Mode | Enhancement | Enhancement |
| Qualification | AEC-Q101 | AEC-Q101 |
| Packaging | Reel | - |
| Transistor Type | 2 N-Channel | 2 N-Channel |
| Brand | Nexperia | Nexperia |
| Forward Transconductance Min | 1.6 S | - |
| Fall Time | 31 ns | 31 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 4 ns | 4 ns |
| Factory Pack Quantity | 4000 | 8000 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 86 ns | 86 ns |
| Typical Turn On Delay Time | 6 ns | 6 ns |
| Unit Weight | 0.000099 oz | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Nexperia |
PMDT290UNE,115 | MOSFET 20V 800 MA DUAL N-CH TRENCH MOSFET | |
| PMDT290UNEYL | MOSFET PMDT290UNE/SOT666/SOT6 | ||
| PMDT290UNE,115 | MOSFET 2N-CH 20V 0.8A SOT666 | ||
| PMDT290UNEYL | PMDT290UNE/SOT666/SOT6 | ||
| PMDT290UNE | New and Original | ||
| PMDT290UNE115 | Now Nexperia PMDT290UNE Small Signal Field-Effect Transistor, 0.8A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT6 | ||
| PMDT290UNE15 | New and Original |