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| PartNumber | PMDXB600UNEZ | PMDXB600UNE | PMDXB600UNELZ |
| Description | MOSFET 20 V, dual N-channel Trench MOSFET | 20 V, DUAL N-CHANNEL TRENCH MOSF | |
| Manufacturer | Nexperia | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | DFN-1010B-6 | - | - |
| Number of Channels | 2 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Id Continuous Drain Current | 600 mA | - | - |
| Rds On Drain Source Resistance | 3 Ohms, 3 Ohms | - | - |
| Vgs th Gate Source Threshold Voltage | 450 mV | - | - |
| Vgs Gate Source Voltage | 8 V | - | - |
| Qg Gate Charge | 400 pC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 380 mW | - | - |
| Configuration | Dual | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Transistor Type | 2 N-Channel | - | - |
| Brand | Nexperia | - | - |
| Forward Transconductance Min | 1 S | - | - |
| Fall Time | 51 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 9.2 ns | - | - |
| Factory Pack Quantity | 5000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 19 ns | - | - |
| Typical Turn On Delay Time | 5.6 ns | - | - |
| Unit Weight | 0.000042 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Nexperia |
PMDXB600UNEZ | MOSFET 20 V, dual N-channel Trench MOSFET | |
| PMDXB600UNELZ | 20 V, DUAL N-CHANNEL TRENCH MOSF | ||
| PMDXB600UNEZ | MOSFET 2N-CH 20V 0.6A 6DFN | ||
| PMDXB600UNE | New and Original |