PartNumber | PMEG3010AESAYL | PMEG3010AESBYL | PMEG3010AESBZ |
Description | Schottky Diodes & Rectifiers BL Bipolar Discretes | Schottky Diodes & Rectifiers 1A MEGA Schottky Barrier Rectifier | DIODE SCHOTTKY 30V 1A DSN1006-2 |
Manufacturer | Nexperia | Nexperia | NXP Semiconductors |
Product Category | Schottky Diodes & Rectifiers | Schottky Diodes & Rectifiers | Diodes, Rectifiers - Single |
RoHS | Y | Y | - |
Package / Case | DSN-1006U-2 | DSN-1006-2 | - |
Technology | Si | Si | - |
Packaging | Reel | Reel | Tape & Reel (TR) |
Brand | Nexperia | Nexperia | - |
Product Type | Schottky Diodes & Rectifiers | Schottky Diodes & Rectifiers | - |
Factory Pack Quantity | 10000 | 10000 | - |
Subcategory | Diodes & Rectifiers | Diodes & Rectifiers | - |
Product | - | Schottky Rectifiers | - |
Mounting Style | - | SMD/SMT | - |
If Forward Current | - | 1 A | - |
Vrrm Repetitive Reverse Voltage | - | 30 V | - |
Vf Forward Voltage | - | 415 mV | - |
Ifsm Forward Surge Current | - | 10 A | - |
Configuration | - | Single | - |
Ir Reverse Current | - | 300 uA | - |
Minimum Operating Temperature | - | - 55 C | - |
Maximum Operating Temperature | - | + 150 C | - |
Operating Temperature Range | - | - 55 C to + 150 C | - |
Termination Style | - | SMD/SMT | - |
Type | - | Low VF MEGA Schottky Barrier Rectifier | - |
Pd Power Dissipation | - | 1.78 W | - |
trr Reverse Recovery time | - | 3.5 ns | - |
Vr Reverse Voltage | - | 30 V | - |
Unit Weight | - | 0.000014 oz | - |
Series | - | - | - |
Package Case | - | - | 2-XDFN |
Mounting Type | - | - | Surface Mount |
Supplier Device Package | - | - | DSN1006-2 |
Speed | - | - | Fast Recovery = 200mA (Io) |
Diode Type | - | - | Schottky |
Current Reverse Leakage Vr | - | - | 1.25mA @ 30V |
Voltage Forward Vf Max If | - | - | 480mV @ 1A |
Voltage DC Reverse Vr Max | - | - | 30V |
Current Average Rectified Io | - | - | 1A |
Reverse Recovery Time trr | - | - | 3.5ns |
Capacitance Vr F | - | - | 32pF @ 10V, 1MHz |
Operating Temperature Junction | - | - | 150°C (Max) |