PMPB20E

PMPB20EN,115 vs PMPB20ENZ

 
PartNumberPMPB20EN,115PMPB20ENZ
DescriptionMOSFET 30V N-channel Trench MOSFETMOSFET PMPB20EN/SOT1220/REEL 7" Q1/T1
ManufacturerNexperiaNexperia
Product CategoryMOSFETMOSFET
RoHSYY
TechnologySiSi
Mounting StyleSMD/SMTSMD/SMT
Package / CaseDFN-2020MD-6DFN-2020MD-6
Number of Channels1 Channel1 Channel
Transistor PolarityN-ChannelN-Channel
Vds Drain Source Breakdown Voltage30 V30 V
Id Continuous Drain Current10.4 A10.4 A
Rds On Drain Source Resistance16.5 mOhms16.5 mOhms
Vgs th Gate Source Threshold Voltage1 V1 V
Vgs Gate Source Voltage20 V20 V
Qg Gate Charge10.8 nC10.8 nC
Minimum Operating Temperature- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C
Pd Power Dissipation3.5 W12.5 W
ConfigurationSingleSingle
Channel ModeEnhancementEnhancement
PackagingReelReel
Transistor Type1 N-Channel1 N-Channel
BrandNexperiaNexperia
Forward Transconductance Min8 S8 S
Fall Time8 ns8 ns
Product TypeMOSFETMOSFET
Rise Time17 ns17 ns
Factory Pack Quantity30003000
SubcategoryMOSFETsMOSFETs
Typical Turn Off Delay Time9 ns9 ns
Typical Turn On Delay Time9 ns9 ns
Unit Weight0.000254 oz-
Manufacturer Part # Description RFQ
Nexperia
Nexperia
PMPB20EN,115 MOSFET 30V N-channel Trench MOSFET
PMPB20ENZ MOSFET PMPB20EN/SOT1220/REEL 7" Q1/T1
PMPB20ENZ MOSFET N-CH 30V 7.2A 6DFN
PMPB20EN,115 MOSFET 30V N-channel Trench MOSFET
PMPB20EN MOSFET, N CHANNEL, 30V, SOT1220, Transistor Polarity:N Channel, Continuous Drain Current Id:10.4A, Drain Source Voltage Vds:30V, On Resistance Rds(on):0.0165ohm, Rds(on) Test Voltage Vgs:10V, Th
PMPB20EN+115 - Bulk (Alt: PMPB20EN115)
PMPB20EN115 - Bulk (Alt: PMPB20EN115)
Top