PartNumber | PMT200EPEX | PMT200EPEAX | PMT21EN,115 |
Description | MOSFET PMT200EPE/SOT223/SC-73 | MOSFET 70 V, P-channel Trench MOSFET | IGBT Transistors MOSFET 30 V, 7.4 A N-CH TRENCH MOSFET |
Manufacturer | Nexperia | Nexperia | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | SOT-223-3 | SOT-223-3 | - |
Number of Channels | 1 Channel | - | - |
Transistor Polarity | P-Channel | - | - |
Vds Drain Source Breakdown Voltage | 70 V | - | - |
Id Continuous Drain Current | 2.4 A | - | - |
Rds On Drain Source Resistance | 167 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 3 V | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Qg Gate Charge | 15.9 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Pd Power Dissipation | 8.3 W | - | - |
Configuration | Single | - | - |
Channel Mode | Enhancement | - | - |
Packaging | Reel | Reel | - |
Brand | Nexperia | Nexperia | - |
Forward Transconductance Min | 13.5 S | - | - |
Fall Time | 20 ns | - | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 8 ns | - | - |
Factory Pack Quantity | 1000 | 1000 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 42 ns | - | - |
Typical Turn On Delay Time | 6 ns | - | - |
Series | - | PMT200EPEA | - |