 |  |  | |
| PartNumber | PMV65UNEAR | PMV65UN | PMV65UNER |
| Description | MOSFET PMV65UNEA/SOT23/TO-236AB | MOSFET N-CH 20V 2.8A TO236AB | |
| Manufacturer | Nexperia | VB | - |
| Product Category | MOSFET | FETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-23-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Id Continuous Drain Current | 2.8 A | - | - |
| Rds On Drain Source Resistance | 73 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 450 mV | - | - |
| Vgs Gate Source Voltage | 8 V | - | - |
| Qg Gate Charge | 6 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 940 mW | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Qualification | AEC-Q101 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Brand | Nexperia | - | - |
| Forward Transconductance Min | 11 S | - | - |
| Fall Time | 12 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 23 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 35 ns | - | - |
| Typical Turn On Delay Time | 8 ns | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Nexperia |
PMV65UNEAR | MOSFET PMV65UNEA/SOT23/TO-236AB | |
| PMV65UNEAR | MOSFET N-CH 20V 2.8A TO236AB | ||
| PMV65UNER | MOSFET N-CH 20V 2.8A TO236AB | ||
| PMV65UN | New and Original | ||
| PMV65UN125 | New and Original | ||
| PMV65UN215 | Now Nexperia PMV65UN - Small Signal Field-Effect Transistor, TO-236AB | ||
| PMV65UNE | New and Original | ||
| PMV65UNEA | MOSFET 20V, N-channel Trench Automotive MOSFET | ||
NXP Semiconductors |
PMV65UN,215 | IGBT Transistors MOSFET N-Chan 20V 2A | |
| PMV65UNE,215 | New and Original |