PartNumber | PMXB360ENEAZ | PMXB120EPEZ | PMXB350UPEZ |
Description | MOSFET 80 V, N-channel Trench MOSFET | MOSFET 30 V, P-channel Trench MOSFET | MOSFET 20 V, P-channel Trench MOSFET |
Manufacturer | Nexperia | Nexperia | Nexperia |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | DFN-1010D-3 | DFN-1010D-3 | DFN-1010D-3 |
Transistor Polarity | N-Channel | P-Channel | - |
Vds Drain Source Breakdown Voltage | 80 V | 30 V | - |
Id Continuous Drain Current | 1.1 A | 2.4 A | - |
Rds On Drain Source Resistance | 345 mOhms | 100 mOhms | - |
Vgs th Gate Source Threshold Voltage | 1.7 V | 2.5 V | - |
Vgs Gate Source Voltage | 20 V | 20 V | - |
Qg Gate Charge | 3 nC | 11 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 400 mW | 8.33 W | - |
Channel Mode | Enhancement | Enhancement | - |
Qualification | AEC-Q101 | - | - |
Packaging | Reel | Reel | Reel |
Brand | Nexperia | Nexperia | Nexperia |
Forward Transconductance Min | 3.2 S | 5 S | - |
Fall Time | 3 ns | 7 ns | - |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 3.5 ns | 11 ns | - |
Factory Pack Quantity | 5000 | 5000 | 5000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 9 ns | 16 ns | - |
Typical Turn On Delay Time | 2 ns | 4 ns | - |
Unit Weight | 0.000042 oz | 0.000042 oz | - |
Number of Channels | - | 1 Channel | - |
Configuration | - | Single | - |
Transistor Type | - | 1 P-Channel | - |