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| PartNumber | PSMN009-100P,127 | PSMN009-100B,118 |
| Description | MOSFET RAIL PWR-MOS | MOSFET TAPE13 PWR-MOS |
| Manufacturer | Nexperia | Nexperia |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | Through Hole | SMD/SMT |
| Package / Case | TO-220-3 | TO-263-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 100 V | 100 V |
| Id Continuous Drain Current | 75 A | 75 A |
| Rds On Drain Source Resistance | 8.8 mOhms | 8.8 mOhms |
| Vgs Gate Source Voltage | 20 V | 20 V |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C |
| Pd Power Dissipation | 230 W | 230 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Packaging | Tube | Reel |
| Height | 9.4 mm | 4.5 mm |
| Length | 10.3 mm | 10.3 mm |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Width | 4.7 mm | 9.4 mm |
| Brand | Nexperia | Nexperia |
| Fall Time | 43 ns | 43 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 59 ns | 59 ns |
| Factory Pack Quantity | 50 | 800 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 120 ns | 120 ns |
| Typical Turn On Delay Time | 38 ns | 38 ns |
| Part # Aliases | PSMN009-100P | /T3 PSMN009-100B |
| Unit Weight | 0.211644 oz | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Nexperia |
PSMN009-100P,127 | MOSFET RAIL PWR-MOS | |
| PSMN009-100B,118 | MOSFET TAPE13 PWR-MOS | ||
| PSMN009-100B,118 | IGBT Transistors MOSFET TAPE13 PWR-MOS | ||
| PSMN009-100P,127 | MOSFET RAIL PWR-MOS | ||
NXP Semiconductors |
PSMN009-100W,127 | MOSFET N-CH 100V 100A SOT429 | |
| PSMN009-100 | New and Original | ||
| PSMN009-100B | New and Original | ||
| PSMN009-100B /T3 | New and Original | ||
| PSMN009-100B118 | Now Nexperia PSMN009-100B - Power Field-Effect Transistor, 75A I(D), 100V, 0.0088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK | ||
| PSMN009-100P | MOSFET RAIL PWR-MOS | ||
| PSMN009-100P. | New and Original | ||
| PSMN009-100P127 | Now Nexperia PSMN009-100P - Power Field-Effect Transistor, 75A I(D), 100V, 0.0088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SIL3P | ||
| PSMN009-100W | MOSFET RAIL PWR-MOS |