PSMN027

PSMN027-100BS,118 vs PSMN027-100PS,127 vs PSMN027-100XS,127

 
PartNumberPSMN027-100BS,118PSMN027-100PS,127PSMN027-100XS,127
DescriptionMOSFET N-CH 100V 26.8 MOHM MOSFETMOSFET N-CH 100V STD LEVEL MOSFETIGBT Transistors MOSFET N-CH 100V 26.8 MOHMS STD LVL MOSFET
ManufacturerNexperiaNexperia-
Product CategoryMOSFETMOSFET-
RoHSEY-
TechnologySiSi-
Mounting StyleSMD/SMTThrough Hole-
Package / CaseTO-263-3TO-220-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage100 V100 V-
Id Continuous Drain Current37 A37 A-
Rds On Drain Source Resistance48 mOhms26.8 mOhms-
Vgs Gate Source Voltage4.9 V10 V-
Pd Power Dissipation103 W103 W-
ConfigurationSingleSingle-
PackagingReelTube-
Transistor Type1 N-Channel1 N-Channel-
BrandNexperiaNexperia-
Product TypeMOSFETMOSFET-
Factory Pack Quantity80050-
SubcategoryMOSFETsMOSFETs-
Unit Weight0.139332 oz0.211644 oz-
Vgs th Gate Source Threshold Voltage-2 V-
Qg Gate Charge-30 nC-
Minimum Operating Temperature-- 55 C-
Maximum Operating Temperature-+ 175 C-
Channel Mode-Enhancement-
Height-9.4 mm-
Length-10.3 mm-
Type-N-Channel 100 V 26.8 mOhms Standard Level MOSFET in TO220-
Width-4.7 mm-
Fall Time-8.9 ns-
Rise Time-11.4 ns-
Typical Turn Off Delay Time-29.6 ns-
Typical Turn On Delay Time-14.4 ns-
Manufacturer Part # Description RFQ
Nexperia
Nexperia
PSMN027-100BS,118 MOSFET N-CH 100V 26.8 MOHM MOSFET
PSMN027-100PS,127 MOSFET N-CH 100V STD LEVEL MOSFET
PSMN027-100BS,118 IGBT Transistors MOSFET N-CH 100V 26.8 MOHM MOSFET
PSMN027-100XS,127 IGBT Transistors MOSFET N-CH 100V 26.8 MOHMS STD LVL MOSFET
PSMN027-100PS,127 MOSFET N-CH 100V TO220AB
PSMN027-100P New and Original
PSMN027-100PS New and Original
PSMN027-100PS127 MOSFET,N CH,100V,37A,TO-220AB
PSMN027-100XS127 - Bulk (Alt: PSMN027-100XS127)
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