PartNumber | PSMN027-100BS,118 | PSMN027-100PS,127 | PSMN027-100XS,127 |
Description | MOSFET N-CH 100V 26.8 MOHM MOSFET | MOSFET N-CH 100V STD LEVEL MOSFET | IGBT Transistors MOSFET N-CH 100V 26.8 MOHMS STD LVL MOSFET |
Manufacturer | Nexperia | Nexperia | - |
Product Category | MOSFET | MOSFET | - |
RoHS | E | Y | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | Through Hole | - |
Package / Case | TO-263-3 | TO-220-3 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 100 V | 100 V | - |
Id Continuous Drain Current | 37 A | 37 A | - |
Rds On Drain Source Resistance | 48 mOhms | 26.8 mOhms | - |
Vgs Gate Source Voltage | 4.9 V | 10 V | - |
Pd Power Dissipation | 103 W | 103 W | - |
Configuration | Single | Single | - |
Packaging | Reel | Tube | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Brand | Nexperia | Nexperia | - |
Product Type | MOSFET | MOSFET | - |
Factory Pack Quantity | 800 | 50 | - |
Subcategory | MOSFETs | MOSFETs | - |
Unit Weight | 0.139332 oz | 0.211644 oz | - |
Vgs th Gate Source Threshold Voltage | - | 2 V | - |
Qg Gate Charge | - | 30 nC | - |
Minimum Operating Temperature | - | - 55 C | - |
Maximum Operating Temperature | - | + 175 C | - |
Channel Mode | - | Enhancement | - |
Height | - | 9.4 mm | - |
Length | - | 10.3 mm | - |
Type | - | N-Channel 100 V 26.8 mOhms Standard Level MOSFET in TO220 | - |
Width | - | 4.7 mm | - |
Fall Time | - | 8.9 ns | - |
Rise Time | - | 11.4 ns | - |
Typical Turn Off Delay Time | - | 29.6 ns | - |
Typical Turn On Delay Time | - | 14.4 ns | - |