PSMN030-6

PSMN030-60YS,115 vs PSMN030-60YS vs PSMN030-60YS,115-CUT TAPE

 
PartNumberPSMN030-60YS,115PSMN030-60YSPSMN030-60YS,115-CUT TAPE
DescriptionMOSFET Single N-Channel 60V 116A 56W 49.6mOhmsMOSFET,N CHANNEL,60V,29A,LFPAK, Transistor Polarity:N Channel, Continuous Drain Current Id:29A, Drain Source Voltage Vds:60V, On Resistance Rds(on):19.1mohm, Rds(on) Test Voltage Vgs:10V, Thresh
ManufacturerNexperiaNXP-
Product CategoryMOSFETFETs - Single-
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseLFPAK56-5--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current29 A--
Rds On Drain Source Resistance24.7 mOhms--
Vgs th Gate Source Threshold Voltage2 V--
Vgs Gate Source Voltage10 V--
Qg Gate Charge13 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation56 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Transistor Type1 N-Channel--
BrandNexperia--
Fall Time5 ns--
Product TypeMOSFET--
Rise Time6 ns--
Factory Pack Quantity1500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time19 ns--
Typical Turn On Delay Time10 ns--
Unit Weight0.003157 oz--
Manufacturer Part # Description RFQ
Nexperia
Nexperia
PSMN030-60YS,115 MOSFET Single N-Channel 60V 116A 56W 49.6mOhms
PSMN030-60YS,115 MOSFET N-CH 60V 29A LFPAK
PSMN030-60YS MOSFET,N CHANNEL,60V,29A,LFPAK, Transistor Polarity:N Channel, Continuous Drain Current Id:29A, Drain Source Voltage Vds:60V, On Resistance Rds(on):19.1mohm, Rds(on) Test Voltage Vgs:10V, Thresh
PSMN030-60YS_1010 New and Original
PSMN030-60YS,115-CUT TAPE New and Original
Top