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| PartNumber | PSMN1R1-30EL,127 | PSMN1R1-30PL,127 |
| Description | MOSFET N-Ch 30V 1.3 mOhms | MOSFET N-Ch 30V 1.3 mOhms |
| Manufacturer | Nexperia | Nexperia |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | Through Hole | Through Hole |
| Package / Case | I2PAK-3 | TO-220-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V |
| Id Continuous Drain Current | 120 A | 120 A |
| Rds On Drain Source Resistance | 1.3 mOhms | 1.3 mOhms |
| Vgs th Gate Source Threshold Voltage | 1.7 V | 1.3 V |
| Vgs Gate Source Voltage | 20 V | 10 V |
| Qg Gate Charge | 243 nC | 243 nC |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C |
| Pd Power Dissipation | 338 W | 338 W |
| Configuration | Single | Single |
| Packaging | Tube | Tube |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Brand | Nexperia | Nexperia |
| Product Type | MOSFET | MOSFET |
| Factory Pack Quantity | 50 | 50 |
| Subcategory | MOSFETs | MOSFETs |
| Unit Weight | 0.084199 oz | 0.211644 oz |
| Channel Mode | - | Enhancement |
| Fall Time | - | 115 ns |
| Rise Time | - | 213 ns |
| Typical Turn Off Delay Time | - | 199 ns |
| Typical Turn On Delay Time | - | 95 ns |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Nexperia |
PSMN1R1-30EL,127 | MOSFET N-Ch 30V 1.3 mOhms | |
| PSMN1R1-30PL,127 | MOSFET N-Ch 30V 1.3 mOhms | ||
| PSMN1R1-30EL,127 | MOSFET N-CH 30V 120A I2PAK | ||
| PSMN1R1-30PL,127 | MOSFET N-CH 30V 120A TO220AB | ||
| PSMN1R1-30EL127 | Now Nexperia PSMN1R1-30EL - Power Field-Effect Transistor, 120A I(D), 30V, 0.0014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | ||
| PSMN1R1-30PL | New and Original | ||
| PSMN1R1-30PL127 | Now Nexperia PSMN1R1-30PL - Power Field-Effect Transistor, 120A I(D), 30V, 0.0014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |