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| PartNumber | PSMN1R6-30BL,118 | PSMN1R6-30MLHX | PSMN1R6-30PL,127 |
| Description | MOSFET Std N-chanMOSFET | MOSFET PSMN1R6-30MLH/SOT1210/mLFPAK | Darlington Transistors MOSFET N-CH 30V 1.7 mOhm Logic Level MOSFET |
| Manufacturer | Nexperia | Nexperia | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-263-3 | LFPAK33-8 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V | - |
| Id Continuous Drain Current | 100 A | 160 A | - |
| Rds On Drain Source Resistance | 1.9 mOhms | 1.9 mOhms | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 306 W | 106 W | - |
| Configuration | Single | Single | - |
| Packaging | Reel | Reel | - |
| Transistor Type | 1 N-Channel | - | - |
| Brand | Nexperia | Nexperia | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 800 | 1500 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Unit Weight | 0.139332 oz | - | - |
| Vgs th Gate Source Threshold Voltage | - | 1.2 V | - |
| Qg Gate Charge | - | 41 nC | - |
| Channel Mode | - | Enhancement | - |
| Fall Time | - | 24 ns | - |
| Rise Time | - | 34 ns | - |
| Typical Turn Off Delay Time | - | 32 ns | - |
| Typical Turn On Delay Time | - | 17 ns | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Nexperia |
PSMN1R6-30BL,118 | MOSFET Std N-chanMOSFET | |
| PSMN1R6-30MLHX | MOSFET PSMN1R6-30MLH/SOT1210/mLFPAK | ||
| PSMN1R6-30PL,127 | Darlington Transistors MOSFET N-CH 30V 1.7 mOhm Logic Level MOSFET | ||
| PSMN1R6-30BL,118 | RF Bipolar Transistors MOSFET Std N-chanMOSFET | ||
| PSMN1R6-30MLHX | PSMN1R6-30MLH/SOT1210/MLFPAK | ||
| PSMN1R6-30BL118 | Now Nexperia PSMN1R6-30BL - Power Field-Effect Transistor, 100A I(D), 30V, 0.0022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK | ||
| PSMN1R6-30PL | MOSFET,N CHANNEL,30V,100A,TO-220AB, Transistor Polarity:N Channel, Continuous Drain Current Id:100A, Drain Source Voltage Vds:30V, On Resistance Rds(on):0.0014ohm, Rds(on) Test Voltage Vgs:10V, | ||
| PSMN1R6-30PL127 | Now Nexperia PSMN1R6-30PL - Power Field-Effect Transistor, 100A I(D), 30V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |