PSMN2R0-60

PSMN2R0-60ES,127 vs PSMN2R0-60PS,127 vs PSMN2R0-60PSRQ

 
PartNumberPSMN2R0-60ES,127PSMN2R0-60PS,127PSMN2R0-60PSRQ
DescriptionMOSFET N-Ch 60V 2.2 mOhmsMOSFET N-Ch 60V 2.2 mOhmsMOSFET PSMN2R0-60PSR/SIL3P/STANDARD M
ManufacturerNexperiaNexperiaNexperia
Product CategoryMOSFETMOSFETMOSFET
RoHSYYE
TechnologySiSiSi
Mounting StyleThrough HoleThrough Hole-
Package / CaseI2PAK-3TO-220-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage60 V60 V-
Id Continuous Drain Current120 A120 A-
Rds On Drain Source Resistance2.2 mOhms2.2 mOhms-
Vgs th Gate Source Threshold Voltage3 V3 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge137 nC137 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation338 W338 W-
ConfigurationSingleSingle-
PackagingTubeTubeTube
Transistor Type1 N-Channel1 N-Channel-
BrandNexperiaNexperiaNexperia
Product TypeMOSFETMOSFETMOSFET
Factory Pack Quantity505050
SubcategoryMOSFETsMOSFETsMOSFETs
Unit Weight0.084199 oz0.211644 oz-
Manufacturer Part # Description RFQ
Nexperia
Nexperia
PSMN2R0-60ES,127 MOSFET N-Ch 60V 2.2 mOhms
PSMN2R0-60PS,127 MOSFET N-Ch 60V 2.2 mOhms
PSMN2R0-60PSRQ MOSFET PSMN2R0-60PSR/SIL3P/STANDARD M
PSMN2R0-60PSRQ MOSFET N-CH 60V TO220AB
PSMN2R0-60PS,127 MOSFET N-CH 60V 120A TO220AB
PSMN2R0-60ES,127 IGBT Transistors MOSFET N-Ch 60V 2.2 mOhms
PSMN2R0-60 New and Original
PSMN2R0-60PS New and Original
PSMN2R0-60PS127 Now Nexperia PSMN2R0-60PS - Power Field-Effect Transistor, 120A I(D), 60V, 0.0022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
PSMN2R0-60ES.127 Transistor: N-MOSFET, unipolar, 60V, 120A, 338W, I2PAK
PSMN2R0-60ES New and Original
PSMN2R0-60ES127 Now Nexperia PSMN2R0-60ES - Power Field-Effect Transistor, 120A I(D), 60V, 0.0022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
Top