PSMN2R6

PSMN2R6-40YS,115 vs PSMN2R6-60PSQ vs PSMN2R6-30YLC,115

 
PartNumberPSMN2R6-40YS,115PSMN2R6-60PSQPSMN2R6-30YLC,115
DescriptionMOSFET N-CH 40V 2.8 mOhm Standard MOSFETMOSFET N-Channel MOSFETMOSFET N-Ch 30V 2.8mOhms
ManufacturerNexperiaNexperiaNexperia
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleSMD/SMTThrough HoleSMD/SMT
Package / CaseLFPAK56-5TO-220-3LFPAK56-5
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage40 V60 V30 V
Id Continuous Drain Current100 A150 A100 A
Rds On Drain Source Resistance2.6 mOhms5.6 mOhms2.8 mOhms
Pd Power Dissipation131 W326 W106 W
ConfigurationSingleSingleSingle
PackagingReelTubeReel
Transistor Type1 N-Channel1 N-Channel1 N-Channel
BrandNexperiaNexperiaNexperia
Fall Time15 ns58 ns-
Product TypeMOSFETMOSFETMOSFET
Rise Time22 ns50 ns-
Factory Pack Quantity1500501500
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time46 ns87 ns-
Typical Turn On Delay Time24 ns32 ns-
Vgs th Gate Source Threshold Voltage-4.5 V1.54 V
Qg Gate Charge-140 nC39 nC
Unit Weight-0.211644 oz0.002854 oz
Vgs Gate Source Voltage--20 V
Minimum Operating Temperature--- 55 C
Maximum Operating Temperature--+ 175 C
Manufacturer Part # Description RFQ
Nexperia
Nexperia
PSMN2R6-40YS,115 MOSFET N-CH 40V 2.8 mOhm Standard MOSFET
PSMN2R6-60PSQ MOSFET N-Channel MOSFET
PSMN2R6-30YLC,115 MOSFET N-Ch 30V 2.8mOhms
PSMN2R6-40YS,115 MOSFET N-CH 40V 100A LFPAK
PSMN2R6-60PSQ IGBT Transistors MOSFET N-Channel MOSFET
PSMN2R6-30YLC,115 MOSFET N-CH 30V 100A LFPAK
PSMN2R6-30YLC New and Original
PSMN2R6-30YLC115 Now Nexperia PSMN2R6-30YLC - Power Field-Effect Transistor, 100A I(D), 30V, 0.00365ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LFPAK
PSMN2R6-40YS New and Original
PSMN2R6-40YS115 Standard Level MOSFET N-Channel 40V 100A 4-Pin LFPAK - Bulk (Alt: PSMN2R6-40YS115)
PSMN2R6-60PS,127 New and Original
PSMN2R6-60PS127 - Bulk (Alt: PSMN2R6-60PS127)
PSMN2R6-60PSQ127 Now Nexperia PSMN2R6-60PSQ - Power Field-Effect Transistor, 150A I(D), 60V, 0.0026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
PSMN2R6-30YLC,115-CUT TAPE New and Original
PSMN2R6-40YS,115-CUT TAPE New and Original
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