PSMN3R3

PSMN3R3-40YS,115 vs PSMN3R3-60PLQ vs PSMN3R3-80BS,118

 
PartNumberPSMN3R3-40YS,115PSMN3R3-60PLQPSMN3R3-80BS,118
DescriptionMOSFET N-CHAN 40V 97AMOSFET N-Channel MOSFETMOSFET Std N-chanMOSFET
ManufacturerNexperiaNexperiaNexperia
Product CategoryMOSFETMOSFETMOSFET
RoHSEYY
TechnologySiSiSi
Mounting StyleSMD/SMTThrough HoleSMD/SMT
Package / CaseLFPAK56-5TO-220-3TO-263-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage40 V60 V80 V
Id Continuous Drain Current100 A130 A120 A
Rds On Drain Source Resistance3.3 mOhms7.5 mOhms3.5 mOhms
Vgs Gate Source Voltage20 V-20 V
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 175 C-+ 175 C
Pd Power Dissipation117 W293 W306 W
ConfigurationSingleSingleSingle
PackagingReelTubeReel
Transistor Type1 N-Channel1 N-Channel1 N-Channel
BrandNexperiaNexperiaNexperia
Product TypeMOSFETMOSFETMOSFET
Factory Pack Quantity150050800
SubcategoryMOSFETsMOSFETsMOSFETs
Unit Weight0.004586 oz0.211644 oz0.139332 oz
Vgs th Gate Source Threshold Voltage-2.45 V-
Qg Gate Charge-175 nC-
Fall Time-109 ns-
Rise Time-100 ns-
Typical Turn Off Delay Time-158 ns-
Typical Turn On Delay Time-54.2 ns-
Manufacturer Part # Description RFQ
Nexperia
Nexperia
PSMN3R3-40YS,115 MOSFET N-CHAN 40V 97A
PSMN3R3-80PS,127 MOSFET N-Ch 80V 3.3 m std level MOSFET
PSMN3R3-60PLQ MOSFET N-Channel MOSFET
PSMN3R3-80ES,127 MOSFET N-Ch 80V 3.3 m std level MOSFET
PSMN3R3-80BS,118 MOSFET Std N-chanMOSFET
PSMN3R3-80PS,127 MOSFET N-CH 80V 120A TO220AB
PSMN3R3-40YS,115 MOSFET N-CH 40V LFPAK
PSMN3R3-60PLQ IGBT Transistors MOSFET N-Channel MOSFET
PSMN3R3-80ES,127 RF Bipolar Transistors MOSFET N-Ch 80V 3.3 m std level MOSFET
PSMN3R3-80BS,118 MOSFET N-CH 80V 120A D2PAK
PSMN3R3-40YS MOSFET,N CHANNEL,40V,100A,LFPAK, Transistor Polarity:N Channel, Continuous Drain Current Id:100A, Drain Source Voltage Vds:40V, On Resistance Rds(on):0.0026ohm, Rds(on) Test Voltage Vgs:10V, Thr
PSMN3R3-80BS118 New and Original
PSMN3R3-80ES127 Now Nexperia PSMN3R3-80ES - Power Field-Effect Transistor, 120A I(D), 80V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
PSMN3R3-80PS New and Original
PSMN3R3-40YS,115-CUT TAPE New and Original
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