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| PartNumber | PSMN3R4-30BLE,118 | PSMN3R4-30BL,118 |
| Description | MOSFET N-channel 30 V 3.4 mo FET | MOSFET Std N-chanMOSFET |
| Manufacturer | Nexperia | Nexperia |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | TO-263-3 | TO-263-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V |
| Id Continuous Drain Current | 120 A | 100 A |
| Rds On Drain Source Resistance | 2.95 mOhms | 3.3 mOhms |
| Vgs th Gate Source Threshold Voltage | 1.7 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V |
| Qg Gate Charge | 81 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C |
| Pd Power Dissipation | 178 W | 114 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | - |
| Packaging | Reel | Reel |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Brand | Nexperia | Nexperia |
| Fall Time | 51.2 ns | - |
| Product Type | MOSFET | MOSFET |
| Rise Time | 101 ns | - |
| Factory Pack Quantity | 800 | 800 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 49 ns | - |
| Typical Turn On Delay Time | 35.7 ns | - |
| Unit Weight | 0.050742 oz | 0.139332 oz |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Nexperia |
PSMN3R4-30BLE,118 | MOSFET N-channel 30 V 3.4 mo FET | |
| PSMN3R4-30BL,118 | MOSFET Std N-chanMOSFET | ||
| PSMN3R4-30BLE,118 | Darlington Transistors MOSFET N-channel 30 V 3.4 mo FET | ||
| PSMN3R4-30BL,118 | IGBT Transistors MOSFET Std N-chanMOSFET | ||
| PSMN3R4-30BLE.118 | Transistor: N-MOSFET, unipolar, 30V, 119A, 178W, D2PAK | ||
| PSMN3R4-30BL118 | Now Nexperia PSMN3R4-30BL - Power Field-Effect Transistor, 100A I(D), 30V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK |