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| PartNumber | PSMN3R4-30PL,127 | PSMN3R4-30PL | PSMN3R4-30PL127 |
| Description | MOSFET N-CHAN 30V 100A | Now Nexperia PSMN3R4-30PL - Power Field-Effect Transistor, 100A I(D), 30V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | |
| Manufacturer | Nexperia | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-220-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 100 A | - | - |
| Rds On Drain Source Resistance | 3.4 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 114 W | - | - |
| Configuration | Single | - | - |
| Packaging | Tube | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Brand | Nexperia | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 50 | - | - |
| Subcategory | MOSFETs | - | - |
| Unit Weight | 0.211644 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Nexperia |
PSMN3R4-30PL,127 | MOSFET N-CHAN 30V 100A | |
| PSMN3R4-30PL,127 | IGBT Transistors MOSFET N-CHAN 30V 100A | ||
| PSMN3R4-30PL | New and Original | ||
| PSMN3R4-30PL127 | Now Nexperia PSMN3R4-30PL - Power Field-Effect Transistor, 100A I(D), 30V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |