PartNumber | PSMN4R6-60BS,118 | PSMN4R6-60PS,127 |
Description | MOSFET Std N-chanMOSFET | MOSFET N-CH 60V STD LEVEL MOSFET |
Manufacturer | Nexperia | Nexperia |
Product Category | MOSFET | MOSFET |
RoHS | Y | Y |
Technology | Si | Si |
Mounting Style | SMD/SMT | Through Hole |
Package / Case | TO-263-3 | TO-220-3 |
Number of Channels | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 60 V | 60 V |
Id Continuous Drain Current | 100 A | 100 A |
Rds On Drain Source Resistance | 4.4 mOhms | 8.4 mOhms |
Vgs Gate Source Voltage | 20 V | 20 V |
Minimum Operating Temperature | - 55 C | - 55 C |
Maximum Operating Temperature | + 175 C | + 175 C |
Pd Power Dissipation | 211 W | 211 W |
Configuration | Single | Single |
Packaging | Reel | Tube |
Transistor Type | 1 N-Channel | 1 N-Channel |
Brand | Nexperia | Nexperia |
Product Type | MOSFET | MOSFET |
Factory Pack Quantity | 800 | 50 |
Subcategory | MOSFETs | MOSFETs |
Unit Weight | 0.139332 oz | 0.211644 oz |
Vgs th Gate Source Threshold Voltage | - | 4.8 V |
Qg Gate Charge | - | 70.8 nC |
Channel Mode | - | Enhancement |
Height | - | 9.4 mm |
Length | - | 10.3 mm |
Type | - | N-Channel 60 V 4.6 mOhms Standard Level MOSFET in TO220 |
Width | - | 4.7 mm |
Fall Time | - | 22 ns |
Rise Time | - | 24 ns |
Typical Turn Off Delay Time | - | 58 ns |
Typical Turn On Delay Time | - | 26 ns |