PSMN4R6-6

PSMN4R6-60BS,118 vs PSMN4R6-60PS,127

 
PartNumberPSMN4R6-60BS,118PSMN4R6-60PS,127
DescriptionMOSFET Std N-chanMOSFETMOSFET N-CH 60V STD LEVEL MOSFET
ManufacturerNexperiaNexperia
Product CategoryMOSFETMOSFET
RoHSYY
TechnologySiSi
Mounting StyleSMD/SMTThrough Hole
Package / CaseTO-263-3TO-220-3
Number of Channels1 Channel1 Channel
Transistor PolarityN-ChannelN-Channel
Vds Drain Source Breakdown Voltage60 V60 V
Id Continuous Drain Current100 A100 A
Rds On Drain Source Resistance4.4 mOhms8.4 mOhms
Vgs Gate Source Voltage20 V20 V
Minimum Operating Temperature- 55 C- 55 C
Maximum Operating Temperature+ 175 C+ 175 C
Pd Power Dissipation211 W211 W
ConfigurationSingleSingle
PackagingReelTube
Transistor Type1 N-Channel1 N-Channel
BrandNexperiaNexperia
Product TypeMOSFETMOSFET
Factory Pack Quantity80050
SubcategoryMOSFETsMOSFETs
Unit Weight0.139332 oz0.211644 oz
Vgs th Gate Source Threshold Voltage-4.8 V
Qg Gate Charge-70.8 nC
Channel Mode-Enhancement
Height-9.4 mm
Length-10.3 mm
Type-N-Channel 60 V 4.6 mOhms Standard Level MOSFET in TO220
Width-4.7 mm
Fall Time-22 ns
Rise Time-24 ns
Typical Turn Off Delay Time-58 ns
Typical Turn On Delay Time-26 ns
Manufacturer Part # Description RFQ
Nexperia
Nexperia
PSMN4R6-60BS,118 MOSFET Std N-chanMOSFET
PSMN4R6-60PS,127 MOSFET N-CH 60V STD LEVEL MOSFET
PSMN4R6-60BS,118 MOSFET N-CH 60V 100A D2PAK
PSMN4R6-60PS,127 IGBT Transistors MOSFET N-CH 60V STD LEVEL MOSFET
PSMN4R6-60BS118 New and Original
PSMN4R6-60PS New and Original
PSMN4R6-60PS/BS New and Original
PSMN4R6-60PS127 Now Nexperia PSMN4R6-60PS - Power Field-Effect Transistor, 100A I(D), 60V, 0.0046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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