PSMN6R0-3

PSMN6R0-30YL,115 vs PSMN6R0-30YLB,115 vs PSMN6R0-30YLDX

 
PartNumberPSMN6R0-30YL,115PSMN6R0-30YLB,115PSMN6R0-30YLDX
DescriptionMOSFET <=30V N CH TRENCHFETMOSFET N-CH 30 V 6.5 MOHMS LOGIC LEVEL MOSFETMOSFET N-channel 30 V 6 mo FET
ManufacturerNexperiaNexperiaNexperia
Product CategoryMOSFETMOSFETMOSFET
RoHSYEY
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseLFPAK56-5LFPAK56-5LFPAK56-5
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage30 V30 V30 V
Id Continuous Drain Current79 A71 A66 A
Rds On Drain Source Resistance6 mOhms6.9 mOhms6.7 mOhms
Vgs Gate Source Voltage20 V-20 V
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 175 C-+ 175 C
Pd Power Dissipation55 W-47 W
ConfigurationSingleSingleSingle
Channel ModeEnhancement-Enhancement
PackagingReelReelReel
Height1.1 mm--
Length5 mm--
Transistor Type1 N-Channel1 N-Channel1 N-Channel
Width4.1 mm--
BrandNexperiaNexperiaNexperia
Fall Time11 ns-10.9 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time43 ns-16.2 ns
Factory Pack Quantity150015001500
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time31 ns-10.5 ns
Typical Turn On Delay Time25 ns-9 ns
Part # AliasesPSMN6R0-30YL T/R--
Unit Weight0.003168 oz-0.005644 oz
Vgs th Gate Source Threshold Voltage--1.83 V
Qg Gate Charge--13.7 nC
Manufacturer Part # Description RFQ
Nexperia
Nexperia
PSMN6R0-30YL,115 MOSFET <=30V N CH TRENCHFET
PSMN6R0-30YLB,115 MOSFET N-CH 30 V 6.5 MOHMS LOGIC LEVEL MOSFET
PSMN6R0-30YLDX MOSFET N-channel 30 V 6 mo FET
PSMN6R0-30YL,115 IGBT Transistors MOSFET
PSMN6R0-30YLDX IGBT Transistors MOSFET N-channel 30 V 6 mo FET
PSMN6R0-30YLB,115 MOSFET N-CH 30V LFPAK
PSMN6R0-30YL115 New and Original
PSMN6R0-30YLD New and Original
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