PSMN6R5-8

PSMN6R5-80BS,118 vs PSMN6R5-80PS,127

 
PartNumberPSMN6R5-80BS,118PSMN6R5-80PS,127
DescriptionMOSFET N-CH 80 V 46 MOHM MOSFETMOSFET N-CHAN 80V 100A
ManufacturerNexperiaNexperia
Product CategoryMOSFETMOSFET
RoHSEY
TechnologySiSi
Mounting StyleSMD/SMTThrough Hole
Package / CaseTO-263-3TO-220-3
Number of Channels1 Channel1 Channel
Transistor PolarityN-ChannelN-Channel
Vds Drain Source Breakdown Voltage73 V80 V
Id Continuous Drain Current100 A100 A
Rds On Drain Source Resistance6.9 mOhms6.9 mOhms
Vgs Gate Source Voltage4.3 V20 V
Pd Power Dissipation210 W210 W
ConfigurationSingleSingle
PackagingReelTube
Transistor Type1 N-Channel1 N-Channel
BrandNexperiaNexperia
Product TypeMOSFETMOSFET
Factory Pack Quantity80050
SubcategoryMOSFETsMOSFETs
Unit Weight0.139332 oz0.211644 oz
Minimum Operating Temperature-- 55 C
Maximum Operating Temperature-+ 175 C
Manufacturer Part # Description RFQ
Nexperia
Nexperia
PSMN6R5-80BS,118 MOSFET N-CH 80 V 46 MOHM MOSFET
PSMN6R5-80PS,127 MOSFET N-CHAN 80V 100A
PSMN6R5-80PS,127 MOSFET N-CH 80V TO220AB
PSMN6R5-80BS,118 IGBT Transistors MOSFET N-CH 80 V 46 MOHM MOSFET
PSMN6R5-80BS MOSFET, N CHANNEL, 80V, 100A, D2PAK, Transistor Polarity:N Channel, Continuous Drain Current Id:100A, Drain Source Voltage Vds:80V, On Resistance Rds(on):0.0059ohm, Rds(on) Test Voltage Vgs:10V,
PSMN6R5-80PS MOSFET,N CH,80V,100A,TO-220AB
PSMN6R5-80PS127 New and Original
PSMN6R5-80BS118 Now Nexperia PSMN6R5-80BS - Power Field-Effect Transistor, 100A I(D), 80V, 0.0069ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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