PSMN6R5-80B

PSMN6R5-80BS,118 vs PSMN6R5-80BS vs PSMN6R5-80BS118

 
PartNumberPSMN6R5-80BS,118PSMN6R5-80BSPSMN6R5-80BS118
DescriptionMOSFET N-CH 80 V 46 MOHM MOSFETMOSFET, N CHANNEL, 80V, 100A, D2PAK, Transistor Polarity:N Channel, Continuous Drain Current Id:100A, Drain Source Voltage Vds:80V, On Resistance Rds(on):0.0059ohm, Rds(on) Test Voltage Vgs:10V, Now Nexperia PSMN6R5-80BS - Power Field-Effect Transistor, 100A I(D), 80V, 0.0069ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
ManufacturerNexperia--
Product CategoryMOSFET--
RoHSE--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-263-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage73 V--
Id Continuous Drain Current100 A--
Rds On Drain Source Resistance6.9 mOhms--
Vgs Gate Source Voltage4.3 V--
Pd Power Dissipation210 W--
ConfigurationSingle--
PackagingReel--
Transistor Type1 N-Channel--
BrandNexperia--
Product TypeMOSFET--
Factory Pack Quantity800--
SubcategoryMOSFETs--
Unit Weight0.139332 oz--
Manufacturer Part # Description RFQ
Nexperia
Nexperia
PSMN6R5-80BS,118 MOSFET N-CH 80 V 46 MOHM MOSFET
PSMN6R5-80BS,118 IGBT Transistors MOSFET N-CH 80 V 46 MOHM MOSFET
PSMN6R5-80BS MOSFET, N CHANNEL, 80V, 100A, D2PAK, Transistor Polarity:N Channel, Continuous Drain Current Id:100A, Drain Source Voltage Vds:80V, On Resistance Rds(on):0.0059ohm, Rds(on) Test Voltage Vgs:10V,
PSMN6R5-80BS118 Now Nexperia PSMN6R5-80BS - Power Field-Effect Transistor, 100A I(D), 80V, 0.0069ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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