PartNumber | PSMN7R8-100PSEQ | PSMN7R8-120PSQ | PSMN7R8-120ESQ |
Description | MOSFET N-channel 100V 7.8mO std level MOSFET | MOSFET N-channel 120V 7.9mo FET | MOSFET N-channel 120 V 7.9 mo FET |
Manufacturer | Nexperia | Nexperia | Nexperia |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | E | Y | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-220-3 | TO-220-3 | TO-262-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Configuration | Single | Single | Single |
Packaging | Tube | Tube | Tube |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Brand | Nexperia | Nexperia | Nexperia |
Product Type | MOSFET | MOSFET | MOSFET |
Factory Pack Quantity | 50 | 50 | 50 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Unit Weight | 0.063493 oz | 0.211644 oz | 0.084199 oz |
Vds Drain Source Breakdown Voltage | - | 120 V | 120 V |
Id Continuous Drain Current | - | 70 A | 70 A |
Rds On Drain Source Resistance | - | 6.72 mOhms | 6.72 mOhms |
Vgs th Gate Source Threshold Voltage | - | 3 V | 3 V |
Vgs Gate Source Voltage | - | 20 V | 20 V |
Qg Gate Charge | - | 167 nC | 167 nC |
Minimum Operating Temperature | - | - 55 C | - 55 C |
Maximum Operating Temperature | - | + 175 C | + 175 C |
Pd Power Dissipation | - | 349 W | 349 W |
Fall Time | - | 60.8 ns | 60.8 ns |
Rise Time | - | 55.3 ns | 55.3 ns |
Typical Turn Off Delay Time | - | 151.8 ns | 151.8 ns |
Typical Turn On Delay Time | - | 45.5 ns | 45.5 ns |