PartNumber | PSMN8R5-100ESQ | PSMN8R5-100ESFQ | PSMN8R5-100PSFQ |
Description | MOSFET PSMN8R5-100ES/I2PAK/STANDARD M | MOSFET PSMN8R5-100ESF SOT226/I2PAK | MOSFET PSMN8R5-100PSF SOT78/SIL3P |
Manufacturer | Nexperia | Nexperia | Nexperia |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | - | - |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-262-3 | I2PAK-3 | TO-220-3 |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 100 V | 100 V | 100 V |
Id Continuous Drain Current | 100 A | 97 A | 98 A |
Rds On Drain Source Resistance | 22.6 mOhms | 8.8 mOhms | 8.7 mOhms |
Vgs th Gate Source Threshold Voltage | 4 V | 2 V | 2 V |
Qg Gate Charge | 111 nC | 44.5 nC | 44.5 nC |
Pd Power Dissipation | 263 W | 183 W | 183 W |
Packaging | Tube | Tube | Tube |
Brand | Nexperia | Nexperia | Nexperia |
Fall Time | 43 ns | 23.6 ns | 23.6 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 35 ns | 26.8 ns | 26.8 ns |
Factory Pack Quantity | 50 | 50 | 50 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 87 ns | 31.5 ns | 31.5 ns |
Typical Turn On Delay Time | 20 ns | 16.8 ns | 16.8 ns |
Unit Weight | 0.084199 oz | - | - |
Number of Channels | - | 1 Channel | 1 Channel |
Vgs Gate Source Voltage | - | 20 V | 20 V |
Minimum Operating Temperature | - | - 55 C | - 55 C |
Maximum Operating Temperature | - | + 175 C | + 175 C |
Configuration | - | Single | Single |
Channel Mode | - | Enhancement | Enhancement |
Transistor Type | - | 1 N-Channel | 1 N-Channel |