PSMN9R5-100P

PSMN9R5-100PS,127 vs PSMN9R5-100PS vs PSMN9R5-100PS127

 
PartNumberPSMN9R5-100PS,127PSMN9R5-100PSPSMN9R5-100PS127
DescriptionMOSFET N-CH 100V STD LEVEL MOSFETNow Nexperia PSMN9R5-100PS - Power Field-Effect Transistor, 89A I(D), 100V, 0.0096ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
ManufacturerNexperia--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-220-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current89 A--
Rds On Drain Source Resistance9.6 mOhms--
Vgs th Gate Source Threshold Voltage4.8 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge82 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation211 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTube--
Height9.4 mm--
Length10.3 mm--
Transistor Type1 N-Channel--
TypeN-Channel 100 V 9.6 mOhms Standard Level MOSFET in TO220--
Width4.7 mm--
BrandNexperia--
Fall Time22.8 ns--
Product TypeMOSFET--
Rise Time25.2 ns--
Factory Pack Quantity50--
SubcategoryMOSFETs--
Typical Turn Off Delay Time52.2 ns--
Typical Turn On Delay Time22 ns--
Unit Weight0.211644 oz--
Manufacturer Part # Description RFQ
Nexperia
Nexperia
PSMN9R5-100PS,127 MOSFET N-CH 100V STD LEVEL MOSFET
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PSMN9R5-100PS New and Original
PSMN9R5-100PS127 Now Nexperia PSMN9R5-100PS - Power Field-Effect Transistor, 89A I(D), 100V, 0.0096ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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