PTFA080551E stock, PTFA080551E, PTFA080551E-V4-R0


PartNumber	PTFA080551E-V4-R0	PTFA080551E V1	PTFA080551E-V4-R250
Description	RF MOSFET Transistors MOSFET	RF MOSFET Transistors RFP-LDMOS GOLDMOS 8 50 W	IC FET RF LDMOS 55W H-36265-2
Manufacturer	Cree, Inc.	Infineon	-
Product Category	RF MOSFET Transistors	RF MOSFET Transistors	-
RoHS	Y	Y	-
Transistor Polarity	N-Channel	N-Channel	-
Technology	Si	Si	-
Id Continuous Drain Current	450 mA	600 mA	-
Vds Drain Source Breakdown Voltage	65 V	65 V	-
Rds On Drain Source Resistance	150 mOhms	150 mOhms	-
Gain	18.5 dB	18.5 dB	-
Output Power	55 W	55 W	-
Mounting Style	Screw Mount	SMD/SMT	-
Packaging	Reel	Tray	-
Operating Frequency	869 MHz to 960 MHz	869 MHz to 960 MHz	-
Type	RF Power MOSFET	RF Power MOSFET	-
Brand	Wolfspeed / Cree	Infineon Technologies	-
Number of Channels	1 Channel	-	-
Pd Power Dissipation	219 W	219 W	-
Product Type	RF MOSFET Transistors	RF MOSFET Transistors	-
Factory Pack Quantity	50	-	-
Subcategory	MOSFETs	MOSFETs	-
Vgs Gate Source Voltage	- 0.5 V to 12 V	12 V	-
Vgs th Gate Source Threshold Voltage	2 V	-	-
Minimum Operating Temperature	-	- 40 C	-
Maximum Operating Temperature	-	+ 150 C	-
Package / Case	-	H-36265-2	-
Configuration	-	Single	-
Height	-	3.56 mm	-
Length	-	20.31 mm	-
Width	-	15.34 mm	-

Search Part Number : "PTFA080551E", Match & Start with "PTFA080551E" - Total : 12

Manufacturer	Part #	Description
N/A	PTFA080551E-V4-R0	RF MOSFET Transistors MOSFET
	PTFA080551E-V4-R0	RF MOSFET LDMOS 28V H-36265-2
	PTFA080551E-V4-R250	IC FET RF LDMOS 55W H-36265-2
Infineon Technologies	PTFA080551E V1	RF MOSFET Transistors RFP-LDMOS GOLDMOS 8 50 W
Infineon Technologies	PTFA080551EV4T500XWSA1	IC FET RF LDMOS 55W H-36265-2
Infineon Technologies	PTFA080551E V1	IC FET RF LDMOS 55W H-36265-2
	PTFA080551EV4R0XTMA1	RF MOSFET Transistors
	PTFA080551E	New and Original
	PTFA080551E V4	New and Original
	PTFA080551EV1	New and Original
	PTFA080551EV4	New and Original
	PTFA080551EV4R250XTMA1	New and Original

PTFA080551E