PartNumber | PTFA211801F V4 R250 | PTFA211801F V4 | PTFA211801F |
Description | RF MOSFET Transistors Hi Pwr RF LDMOS FET 180 W 2110-2170 MHz | IC FET RF LDMOS 180W H-37260-2 | |
Manufacturer | Infineon | - | - |
Product Category | RF MOSFET Transistors | - | - |
RoHS | Y | - | - |
Transistor Polarity | N-Channel | - | - |
Technology | Si | - | - |
Id Continuous Drain Current | 1.3 A | - | - |
Vds Drain Source Breakdown Voltage | 65 V | - | - |
Rds On Drain Source Resistance | 50 mOhms | - | - |
Gain | 17.5 dB | - | - |
Output Power | 180 W | - | - |
Minimum Operating Temperature | - 40 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | H-34288-4/2 | - | - |
Packaging | Reel | - | - |
Configuration | Single | - | - |
Height | 4.11 mm | - | - |
Length | 23.11 mm | - | - |
Operating Frequency | 2170 MHz | - | - |
Type | RF Power MOSFET | - | - |
Width | 13.72 mm | - | - |
Brand | Infineon Technologies | - | - |
Channel Mode | Enhancement | - | - |
Pd Power Dissipation | 56.5 W | - | - |
Product Type | RF MOSFET Transistors | - | - |
Factory Pack Quantity | 250 | - | - |
Subcategory | MOSFETs | - | - |
Vgs Gate Source Voltage | 10 V | - | - |
Part # Aliases | FA211801FV4R25XT | - | - |