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PTFB212

PTFB212503FL-V2-R0 vs PTFB212503EL-V1-R0 vs PTFB212503EL-V1-R250

 
PartNumberPTFB212503FL-V2-R0PTFB212503EL-V1-R0PTFB212503EL-V1-R250
DescriptionRF MOSFET Transistors RF LDMOS FETIC AMP RF LDMOS H-33288-6IC AMP RF LDMOS
ManufacturerCree, Inc.--
Product CategoryRF MOSFET Transistors--
RoHSY--
Transistor PolarityN-Channel--
TechnologySi--
Vds Drain Source Breakdown Voltage65 V--
Rds On Drain Source Resistance50 mOhms--
Gain18 dB--
Output Power240 W--
Maximum Operating Temperature+ 200 C--
Mounting StyleSMD/SMT--
Package / CaseH-34288-4/2--
PackagingReel--
Operating Frequency2110 MHz to 2170 MHz--
TypeRF Power MOSFET--
BrandWolfspeed / Cree--
Number of Channels1 Channel--
Product TypeRF MOSFET Transistors--
Factory Pack Quantity50--
SubcategoryMOSFETs--
Vgs Gate Source Voltage10 V--
Manufacturer Part # Description RFQ
N/A
N/A 		PTFB212503FL-V2-R0 RF MOSFET Transistors RF LDMOS FET
PTFB212503FL-V2-R250 RF MOSFET Transistors RF LDMOS FET
PTFB212503EL-V1-R0 IC AMP RF LDMOS H-33288-6
PTFB212503EL-V1-R250 IC AMP RF LDMOS
PTFB212503FL-V2-R0 IC AMP RF LDMOS H-34288-4
PTFB212503FL-V2-R250 IC AMP RF LDMOS
Infineon Technologies
Infineon Technologies 		PTFB212507SHV1R250XTMA1 RF MOSFET Transistors RFP-LDMOS 9
PTFB212503FLV2R0XTMA1 RF MOSFET Transistors
PTFB212503ELV1R0XTMA1 RF MOSFET Transistors
PTFB212503E New and Original
PTFB212503EL New and Original
PTFB212503EL V1 New and Original
PTFB212503ELV1 New and Original
PTFB212503ELV1R250XTMA1 New and Original
PTFB212503FL New and Original
PTFB212503FL V2 New and Original
PTFB212503FLV2 R250 New and Original
PTFB2125075HVIR250 New and Original
PTFB212507SH V2 R250 New and Original
PTFB212507SHV1 New and Original
Infineon Technologies
Infineon Technologies 		PTFB212507SHV1R250XTMA1 RF MOSFET Transistors RFP-LDMOS 9
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