PartNumber | PTVA035002EV-V1-R250 | PTVA035002EVV1XWSA1 | PTVA035002EV-V1-R0 |
Description | RF MOSFET Transistors RF LDMOS FET | RF MOSFET Transistors RFP-LDH1V | IC AMP RF LDMOS H-36275-4 |
Manufacturer | Cree, Inc. | Infineon | - |
Product Category | RF MOSFET Transistors | RF MOSFET Transistors | - |
RoHS | Y | - | - |
Transistor Polarity | Dual N-Channel | - | - |
Technology | Si | Si | - |
Vds Drain Source Breakdown Voltage | 105 V | - | - |
Rds On Drain Source Resistance | 100 mOhms | - | - |
Gain | 18 dB | - | - |
Output Power | 500 W | - | - |
Maximum Operating Temperature | + 225 C | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | H-36275-4 | H-36275-4 | - |
Packaging | Reel | Tray | - |
Operating Frequency | 390 MHz to 450 MHz | - | - |
Type | RF Power MOSFET | - | - |
Brand | Wolfspeed / Cree | Infineon Technologies | - |
Number of Channels | 2 Channel | - | - |
Product Type | RF MOSFET Transistors | RF MOSFET Transistors | - |
Factory Pack Quantity | 250 | 30 | - |
Subcategory | MOSFETs | MOSFETs | - |
Vgs Gate Source Voltage | 10 V | - | - |
Part # Aliases | - | PTVA035002EV SP000894022 V1 VA035002EVV1XP | - |