PartNumber | PXAC203302FV-V1-R250 | PXAC203302FV-V1-R0 | PXAC203302FV V1 R250 |
Description | RF MOSFET Transistors RF LDMOS FET | RF MOSFET Transistors RF LDMOS FET | RF MOSFET Transistors RFP-LD10M |
Manufacturer | Cree, Inc. | Cree, Inc. | Infineon |
Product Category | RF MOSFET Transistors | RF MOSFET Transistors | RF MOSFET Transistors |
RoHS | Y | Y | - |
Transistor Polarity | Dual N-Channel | Dual N-Channel | - |
Technology | Si | Si | Si |
Vds Drain Source Breakdown Voltage | 65 V | 65 V | - |
Rds On Drain Source Resistance | 88 mOhms | 88 mOhms | - |
Gain | 16 dB | 16 dB | - |
Output Power | 330 W | 330 W | - |
Maximum Operating Temperature | + 225 C | + 225 C | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | H-37275-4 | H-37275-4 | - |
Packaging | Reel | Reel | - |
Operating Frequency | 1880 MHz to 2025 MHz | 1880 MHz to 2025 MHz | - |
Type | RF Power MOSFET | RF Power MOSFET | - |
Brand | Wolfspeed / Cree | Wolfspeed / Cree | Infineon Technologies |
Number of Channels | 2 Channel | 2 Channel | - |
Product Type | RF MOSFET Transistors | RF MOSFET Transistors | RF MOSFET Transistors |
Factory Pack Quantity | 250 | 250 | - |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Vgs Gate Source Voltage | 10 V | 10 V | - |