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| PartNumber | QPD2194SR | QPD2195SR | QPD2194 |
| Description | RF JFET Transistors 300 W, 48 V, 1.8-2.2 GHz GaN RF Power Transistor | RF JFET Transistors 400 W, 48 V, 1.8-2.2 GHz GaN RF Power Transistor | |
| Manufacturer | Qorvo | Qorvo | - |
| Product Category | RF JFET Transistors | RF JFET Transistors | - |
| RoHS | Y | Y | - |
| Transistor Type | HEMT | HEMT | - |
| Technology | GaN SiC | GaN SiC | - |
| Gain | 19.1 dB | 20.4 dB | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Output Power | 371 W | 400 W | - |
| Maximum Drain Gate Voltage | 55 V | 55 V | - |
| Minimum Operating Temperature | - 40 C | - 40 C | - |
| Maximum Operating Temperature | + 85 C | - | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | NI400-2 | NI780-2 | - |
| Packaging | Reel | Reel | - |
| Configuration | Single | Single | - |
| Operating Frequency | 1.8 GHz to 2.2 GHz | 1.8 GHz to 2.2 GHz | - |
| Brand | Qorvo | Qorvo | - |
| Development Kit | QPD2194PCB4B01 | QPD2195PCB4B01 | - |
| Moisture Sensitive | Yes | Yes | - |
| Product Type | RF JFET Transistors | RF JFET Transistors | - |
| Factory Pack Quantity | 100 | 100 | - |
| Subcategory | Transistors | Transistors | - |
