 | | | |
| PartNumber | QS8J2 | QS8J2FU7TR | QS8J2TL |
| Description | |||
| Manufacturer | Rohm Semiconductor | - | - |
| Product Category | FETs - Arrays | - | - |
| Series | QS8J2 | - | - |
| Packaging | Tape & Reel (TR) | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package Case | 8-SMD, Flat Lead | - | - |
| Technology | Si | - | - |
| Operating Temperature | 150°C (TJ) | - | - |
| Mounting Type | Surface Mount | - | - |
| Number of Channels | 2 Channel | - | - |
| Supplier Device Package | TSMT8 | - | - |
| Configuration | Dual | - | - |
| FET Type | 2 P-Channel (Dual) | - | - |
| Power Max | 550mW | - | - |
| Transistor Type | 2 P-Channel | - | - |
| Drain to Source Voltage Vdss | 12V | - | - |
| Input Capacitance Ciss Vds | 1940pF @ 6V | - | - |
| FET Feature | Logic Level Gate, 1.5V Drive | - | - |
| Current Continuous Drain Id 25°C | 4A | - | - |
| Rds On Max Id Vgs | 36 mOhm @ 4A, 4.5V | - | - |
| Vgs th Max Id | 1V @ 1mA | - | - |
| Gate Charge Qg Vgs | 20nC @ 4.5V | - | - |
| Pd Power Dissipation | 1.5 W | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Fall Time | 180 ns | - | - |
| Rise Time | 60 ns | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Id Continuous Drain Current | 4 A | - | - |
| Vds Drain Source Breakdown Voltage | - 12 V | - | - |
| Rds On Drain Source Resistance | 26 mOhms | - | - |
| Transistor Polarity | P-Channel | - | - |
| Typical Turn Off Delay Time | 300 ns | - | - |
| Typical Turn On Delay Time | 10 ns | - | - |
| Qg Gate Charge | 20 nC | - | - |
| Forward Transconductance Min | 5.5 S | - | - |
| Channel Mode | Enhancement | - | - |