QS8J4

QS8J4TR vs QS8J4 vs QS8J4 TR

 
PartNumberQS8J4TRQS8J4QS8J4 TR
DescriptionMOSFET TRANS MOSFET PCH 30V 4A 8PIN
ManufacturerROHM SemiconductorRohm Semiconductor-
Product CategoryMOSFETFETs - Arrays-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMT--
Package / CaseTSMT-8--
Number of Channels2 Channel1 Channel-
Transistor PolarityP-ChannelP-Channel-
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current4 A--
Rds On Drain Source Resistance40 mOhms, 40 mOhms--
Vgs th Gate Source Threshold Voltage2.5 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge13 nC, 13 nC--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation1.5 W--
ConfigurationDual--
Channel ModeEnhancement--
PackagingReelDigi-ReelR Alternate Packaging-
SeriesQS8J4QS8J4-
Transistor Type2 P-Channel1 P-Channel-
BrandROHM Semiconductor--
Fall Time50 ns, 50 ns--
Product TypeMOSFET--
Rise Time20 ns, 20 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time80 ns, 80 ns--
Typical Turn On Delay Time8 ns, 8 ns--
Part # AliasesQS8J4--
Package Case-8-SMD, Flat Lead-
Operating Temperature-150°C (TJ)-
Mounting Type-Surface Mount-
Supplier Device Package-TSMT8-
FET Type-2 P-Channel (Dual)-
Power Max-550mW-
Drain to Source Voltage Vdss-30V-
Input Capacitance Ciss Vds-800pF @ 10V-
FET Feature-Logic Level Gate-
Current Continuous Drain Id 25°C-4A-
Rds On Max Id Vgs-56 mOhm @ 4A, 10V-
Vgs th Max Id-2.5V @ 1mA-
Gate Charge Qg Vgs-13nC @ 10V-
Manufacturer Part # Description RFQ
QS8J4TR MOSFET TRANS MOSFET PCH 30V 4A 8PIN
QS8J4 New and Original
QS8J4 TR New and Original
QS8J4TR MOSFET TRANS MOSFET PCH 30V 4A 8PIN
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