 | | | |
| PartNumber | R8002 | R800250R00FE70 | R8002ANJ |
| Description | |||
| Manufacturer | ROHM Semiconductor | - | - |
| Product Category | Transistors - FETs, MOSFETs - Single | - | - |
| Series | R8002ANX | - | - |
| Packaging | Bulk | - | - |
| Unit Weight | 0.211644 oz | - | - |
| Mounting Style | Through Hole | - | - |
| Package Case | TO-220-3 | - | - |
| Technology | Si | - | - |
| Number of Channels | 1 Channel | - | - |
| Configuration | Single | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Pd Power Dissipation | 35 W | - | - |
| Fall Time | 70 ns | - | - |
| Rise Time | 20 ns | - | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Id Continuous Drain Current | 2 A | - | - |
| Vds Drain Source Breakdown Voltage | 800 V | - | - |
| Rds On Drain Source Resistance | 4.3 Ohms | - | - |
| Transistor Polarity | N-Channel | - | - |
| Typical Turn Off Delay Time | 33 ns | - | - |
| Typical Turn On Delay Time | 17 ns | - | - |
| Qg Gate Charge | 12.7 nC | - | - |