RD3H08

RD3H080SPTL1 vs RD3H080SPFRATL vs RD3H080SP

 
PartNumberRD3H080SPTL1RD3H080SPFRATLRD3H080SP
DescriptionMOSFET Pch -45V -8A TO-252(DPAK)MOSFET Pch -45V Vdss -8A ID TO-252(DPAK); TO-252
ManufacturerROHM SemiconductorROHM Semiconductor-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySi--
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseDPAK-3TO-252-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityP-ChannelP-Channel-
Vds Drain Source Breakdown Voltage45 V45 V-
Id Continuous Drain Current8 A8 A-
Rds On Drain Source Resistance65 mOhms91 mOhms-
Vgs th Gate Source Threshold Voltage3 V- 3 V-
Vgs Gate Source Voltage10 V20 V-
Qg Gate Charge9 nC9 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation15 W15 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingReelReel-
Transistor Type1 P-Channel1 P-Channel-
BrandROHM SemiconductorROHM Semiconductor-
Fall Time20 ns20 ns-
Product TypeMOSFETMOSFET-
Rise Time15 ns15 ns-
Factory Pack Quantity25002500-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time50 ns50 ns-
Typical Turn On Delay Time12 ns12 ns-
Part # AliasesRD3H080SP--
Forward Transconductance Min-6 S-
Manufacturer Part # Description RFQ
RD3H080SPTL1 MOSFET Pch -45V -8A TO-252(DPAK)
RD3H080SPFRATL MOSFET Pch -45V Vdss -8A ID TO-252(DPAK); TO-252
RD3H080SP New and Original
RD3H080SPTL1 PCH -45V -8A POWER MOSFET
RD3H080SPFRATL MOSFET Pch -45V Vdss -8A ID TO-252(DPAK), TO-252
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