 |  | | |
| PartNumber | RFD10P03LSM | RFD10P03LSM9A | RFD10P03LSM9A(FDD5614P) |
| Description | MOSFET TO-252AA P-Ch Power | Power Field-Effect Transistor, 10A I(D), 30V, 0.22ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | |
| Manufacturer | ON Semiconductor | HARRIS | - |
| Product Category | MOSFET | IC Chips | - |
| RoHS | N | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-252-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 10 A | - | - |
| Rds On Drain Source Resistance | 200 mOhms | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 65 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Height | 2.39 mm | - | - |
| Length | 6.73 mm | - | - |
| Transistor Type | 1 P-Channel | - | - |
| Width | 6.22 mm | - | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| Fall Time | 20 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 50 ns | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 35 ns | - | - |
| Typical Turn On Delay Time | 15 ns | - | - |
| Unit Weight | 0.139332 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
RFD10P03LSM | MOSFET TO-252AA P-Ch Power | |
ON Semiconductor |
RFD10P03LSM | MOSFET P-CH 30V 10A TO-252AA | |
| RFD10P03LSM9A | Power Field-Effect Transistor, 10A I(D), 30V, 0.22ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | ||
| RFD10P03LSM9A(FDD5614P) | New and Original |