RM5N6

RM5N650IP vs RM5N60S4 vs RM5N650LD

 
PartNumberRM5N650IPRM5N60S4RM5N650LD
DescriptionMOSFET TO-251 MOSFETMOSFET SOT-223-3L MOSFET
ManufacturerRectronRectron-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleThrough HoleSMD/SMT-
Package / CaseTO-251-3SOT-223-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage650 V60 V-
Id Continuous Drain Current5 A5 A-
Rds On Drain Source Resistance900 mOhms55 mOhms-
Vgs th Gate Source Threshold Voltage2.5 V1.2 V-
Vgs Gate Source Voltage30 V20 V-
Qg Gate Charge20 nC8.5 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation49 W2 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingTubeReel-
Transistor Type1 N-Channel1 N-Channel-
BrandRectronRectron-
Forward Transconductance Min4.8 S11 S-
Fall Time9 ns1.9 ns-
Product TypeMOSFETMOSFET-
Rise Time3 ns2.3 ns-
Factory Pack Quantity8003000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time50 ns15.7 ns-
Typical Turn On Delay Time6 ns4.7 ns-
Manufacturer Part # Description RFQ
Rectron
Rectron
RM5N650T2 MOSFET TO-220 MOSFET
RM5N650IP MOSFET TO-251 MOSFET
RM5N60S4 MOSFET SOT-223-3L MOSFET
RM5N650LD New and Original
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