RN1101M

RN1101MFV,L3F vs RN1101MFV(TPL3) vs RN1101MFV

 
PartNumberRN1101MFV,L3FRN1101MFV(TPL3)RN1101MFV
DescriptionBipolar Transistors - Pre-Biased 100mA 50volts 3Pin 4.7K x 4.7KohmsBipolar Transistors - Pre-Biased 100mA 50volts 3Pin 4.7K x 4.7Kohms
ManufacturerToshibaToshibaTOSHIBA
Product CategoryBipolar Transistors - Pre-BiasedBipolar Transistors - Pre-BiasedTransistors (BJT) - Single, Pre-Biased
RoHSYY-
Transistor PolarityNPNNPN-
Typical Input Resistor4.7 kOhms4.7 kOhms-
Typical Resistor Ratio11-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseVESM-3--
DC Collector/Base Gain hfe Min3030-
Collector Emitter Voltage VCEO Max50 V50 V-
Continuous Collector Current100 mA100 mA-
Pd Power Dissipation150 mW150 mW-
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesRN1101RN1101-
PackagingReelReel-
Collector Base Voltage VCBO50 V--
Emitter Base Voltage VEBO10 V--
Height0.5 mm--
Length1.2 mm--
Operating Temperature Range- 55 C to + 150 C--
TypeNPN Epitaxial Silicon Transistor--
Width0.8 mm--
BrandToshibaToshiba-
Number of Channels1 Channel--
Channel ModeEnhancement--
Product TypeBJTs - Bipolar Transistors - Pre-BiasedBJTs - Bipolar Transistors - Pre-Biased-
Factory Pack Quantity80008000-
SubcategoryTransistorsTransistors-
Configuration-Single-
Peak DC Collector Current-100 mA-
DC Current Gain hFE Max-30-
Manufacturer Part # Description RFQ
Toshiba
Toshiba
RN1101MFV,L3F Bipolar Transistors - Pre-Biased 100mA 50volts 3Pin 4.7K x 4.7Kohms
RN1101MFV(TPL3) Bipolar Transistors - Pre-Biased 100mA 50volts 3Pin 4.7K x 4.7Kohms
RN1101MFV(TPL3) Bipolar Transistors - Pre-Biased 100mA 50volts 3Pin 4.7K x 4.7Kohms
RN1101MFVL3XGF New and Original
RN1101MFVL3FCT-ND New and Original
RN1101MFVL3FDKR-ND New and Original
RN1101MFVL3FTR-ND New and Original
RN1101MFV New and Original
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