PartNumber | RN1110MFV,L3F | RN1110,LF(CT | RN1110MFV(TPL3) |
Description | Bipolar Transistors - Pre-Biased Bias Resistor Built-in Transistor | Bipolar Transistors - Pre-Biased Bias Resistor with Built-in Transistor | Bipolar Transistors - Pre-Biased 100mA 50volts 3Pin 4.7Kohms |
Manufacturer | Toshiba | Toshiba | Toshiba |
Product Category | Bipolar Transistors - Pre-Biased | Bipolar Transistors - Pre-Biased | Bipolar Transistors - Pre-Biased |
RoHS | Y | Y | N |
Configuration | Single | Single | Single |
Transistor Polarity | NPN | NPN | NPN |
Typical Input Resistor | 4.7 kOhms | - | - |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | SOT-723-3 | SC-75-3 | - |
DC Collector/Base Gain hfe Min | 120 | 120 | 700 |
Collector Emitter Voltage VCEO Max | 50 V | 50 V | 50 V |
Continuous Collector Current | 100 mA | - | 100 mA |
Pd Power Dissipation | 150 mW | 100 mW | 150 mW |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Series | RN1110MFV | RN1110 | RN1110MFV |
Packaging | Reel | Reel | Reel |
Emitter Base Voltage VEBO | 5 V | 5 V | 5 V |
Brand | Toshiba | Toshiba | Toshiba |
Number of Channels | 1 Channel | - | - |
Product Type | BJTs - Bipolar Transistors - Pre-Biased | BJTs - Bipolar Transistors - Pre-Biased | BJTs - Bipolar Transistors - Pre-Biased |
Factory Pack Quantity | 8000 | 3000 | 8000 |
Subcategory | Transistors | Transistors | Transistors |
Minimum Operating Temperature | - | - 55 C | - |
Collector Base Voltage VCBO | - | 50 V | 50 V |
DC Current Gain hFE Max | - | 700 at 1 mA at 5 V | 120 @ 1mA @ 5V |
Maximum DC Collector Current | - | 100 mA | - |