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| PartNumber | RN1132MFV(TPL3) | RN1132MFV(TL3,T) | RN1132MFV |
| Description | Bipolar Transistors - Pre-Biased 50volts 100mA 3Pin 200Kohms x 0ohms | Bipolar Transistors - Pre-Biased Bias Resistor NPN 100mA 50V 200kohm | |
| Manufacturer | Toshiba | Toshiba | - |
| Product Category | Bipolar Transistors - Pre-Biased | Bipolar Transistors - Pre-Biased | - |
| RoHS | Y | Y | - |
| Configuration | Single | - | - |
| Transistor Polarity | NPN | - | - |
| Typical Input Resistor | 200 kOhms | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-723 | - | - |
| DC Collector/Base Gain hfe Min | 120 | - | - |
| Collector Emitter Voltage VCEO Max | 50 V | - | - |
| Continuous Collector Current | 100 mA | - | - |
| Peak DC Collector Current | 100 mA | - | - |
| Pd Power Dissipation | 150 mW | - | - |
| Minimum Operating Temperature | - 65 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | RN1132MFV | RN1132MFV | - |
| Packaging | Reel | Reel | - |
| Collector Base Voltage VCBO | 50 V | - | - |
| DC Current Gain hFE Max | 700 | - | - |
| Emitter Base Voltage VEBO | 5 V | - | - |
| Height | 0.5 mm | - | - |
| Length | 1.2 mm | - | - |
| Operating Temperature Range | - 65 C to + 150 C | - | - |
| Type | NPN Epitaxial Silicon Transistor | - | - |
| Width | 0.8 mm | - | - |
| Brand | Toshiba | Toshiba | - |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased | BJTs - Bipolar Transistors - Pre-Biased | - |
| Factory Pack Quantity | 8000 | 8000 | - |
| Subcategory | Transistors | Transistors | - |