RN2306(TE

RN2306(TE85L,F) vs RN2306(TE85L) vs RN2306(TE85LF)

 
PartNumberRN2306(TE85L,F)RN2306(TE85L)RN2306(TE85LF)
DescriptionBipolar Transistors - Pre-Biased 100mA -50volts 3Pin 4.7K x 47Kohms
ManufacturerToshiba--
Product CategoryBipolar Transistors - Pre-Biased--
RoHSY--
ConfigurationSingle--
Transistor PolarityPNP--
Typical Input Resistor4.7 kOhms--
Typical Resistor Ratio0.1--
Mounting StyleSMD/SMT--
Package / CaseUSM-3--
DC Collector/Base Gain hfe Min80--
Collector Emitter Voltage VCEO Max50 V--
Continuous Collector Current- 100 mA--
Peak DC Collector Current100 mA--
Pd Power Dissipation100 mW--
Maximum Operating Temperature+ 150 C--
SeriesRN2306--
PackagingReel--
DC Current Gain hFE Max80--
Height0.9 mm--
Length2 mm--
Width1.25 mm--
BrandToshiba--
Product TypeBJTs - Bipolar Transistors - Pre-Biased--
Factory Pack Quantity3000--
SubcategoryTransistors--
Manufacturer Part # Description RFQ
Toshiba
Toshiba
RN2306(TE85L,F) Bipolar Transistors - Pre-Biased 100mA -50volts 3Pin 4.7K x 47Kohms
RN2306(TE85L,F) Bipolar Transistors - Pre-Biased 100mA -50volts 3Pin 4.7K x 47Kohms
RN2306(TE85L) New and Original
RN2306(TE85LF) New and Original
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