PartNumber | RN2310,LF | RN2310(TE85L,F) | RN2311(TE85L,F) |
Description | Bipolar Transistors - Pre-Biased USM PLN TRANSISTOR Pd 100mW F 200Mhz | Bipolar Transistors - Pre-Biased 100mA -50volts 3Pin 4.7Kohms | Bipolar Transistors - Pre-Biased 100mA -50volts 3Pin 10Kohms |
Manufacturer | Toshiba | Toshiba | Toshiba |
Product Category | Bipolar Transistors - Pre-Biased | Bipolar Transistors - Pre-Biased | Bipolar Transistors - Pre-Biased |
RoHS | Y | Y | Y |
Configuration | Single | Single | Single |
Transistor Polarity | PNP | PNP | PNP |
Typical Input Resistor | 4.7 kOhms | 4.7 kOhms | 10 kOhms |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | SC-70 | SC-70 | SC-70 |
DC Collector/Base Gain hfe Min | 120 | 120 | 120 |
Collector Emitter Voltage VCEO Max | - 50 V | 50 V | 50 V |
Continuous Collector Current | - 100 mA | - 100 mA | - 100 mA |
Pd Power Dissipation | 100 mW | 100 mW | 100 mW |
Series | RN2310 | RN2310 | RN2311 |
Packaging | Reel | Reel | Reel |
Collector Base Voltage VCBO | - 50 V | - | - |
Emitter Base Voltage VEBO | - 5 V | - | - |
Height | 0.9 mm | 0.9 mm | 0.9 mm |
Length | 2 mm | 2 mm | 2 mm |
Type | PNP Epitaxial Silicon Transistor | - | - |
Width | 1.25 mm | 1.25 mm | 1.25 mm |
Brand | Toshiba | Toshiba | Toshiba |
Maximum DC Collector Current | - 100 mA | - | - |
Product Type | BJTs - Bipolar Transistors - Pre-Biased | BJTs - Bipolar Transistors - Pre-Biased | BJTs - Bipolar Transistors - Pre-Biased |
Factory Pack Quantity | 3000 | 3000 | 3000 |
Subcategory | Transistors | Transistors | Transistors |
Unit Weight | 0.000988 oz | 0.000988 oz | 0.000988 oz |
Peak DC Collector Current | - | 100 mA | 100 mA |
Maximum Operating Temperature | - | + 150 C | + 150 C |
DC Current Gain hFE Max | - | 400 | 400 |