| PartNumber | RN2510(TE85L,F) | RN2511(TE85L,F) | RN25S-I/RM |
| Description | Bipolar Transistors - Pre-Biased SMV PLN (LF) TRANSISTOR Pd=300mW F=200MHz | Bipolar Transistors - Pre-Biased SMV PLN (LF) TRANSISTOR Pd=300mW F=200MHz | Bluetooth Modules (802.15.1) Class1 Spr Mod RS485 Signaling w/Chip Ant |
| Manufacturer | Toshiba | Toshiba | Microchip |
| Product Category | Bipolar Transistors - Pre-Biased | Bipolar Transistors - Pre-Biased | Bluetooth Modules (802.15.1) |
| Configuration | Dual | Dual | - |
| Transistor Polarity | PNP | PNP | - |
| Typical Input Resistor | 4.7 kOhms | 10 kOhms | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SMV-5 | SMV-5 | - |
| DC Collector/Base Gain hfe Min | 120 | 120 | - |
| Maximum Operating Frequency | 200 MHz | 200 MHz | - |
| Collector Emitter Voltage VCEO Max | - 50 V | - 50 V | - |
| Continuous Collector Current | - 100 mA | - 100 mA | - |
| Peak DC Collector Current | - 100 mA | - 100 mA | - |
| Pd Power Dissipation | 300 mW | 300 mW | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Packaging | Reel | Reel | - |
| Emitter Base Voltage VEBO | - 5 V | - 5 V | - |
| Brand | Toshiba | Toshiba | Microchip Technology |
| Channel Mode | Enhancement | Enhancement | - |
| Maximum DC Collector Current | - 100 mA | - 100 mA | - |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased | BJTs - Bipolar Transistors - Pre-Biased | Bluetooth Modules |
| Factory Pack Quantity | 3000 | 3000 | 10 |
| Subcategory | Transistors | Transistors | Wireless & RF Modules |
| RoHS | - | - | Y |
| Class | - | - | Class 1 |
| Protocol | - | - | Bluetooth 2.1 |
| Frequency | - | - | 2.4 GHz |
| Version | - | - | Bluetooth 2.1 |