RN2605

RN2605(TE85L,F) vs RN2605 vs RN2605(TE85L)

 
PartNumberRN2605(TE85L,F)RN2605RN2605(TE85L)
DescriptionBipolar Transistors - Pre-Biased SM6 PLN (LF) TRANSISTOR Pd=300mW F=1MHz
ManufacturerToshibaToshiba Semiconductor and Storage-
Product CategoryBipolar Transistors - Pre-BiasedTransistors (BJT) - Arrays, Pre-Biased-
ConfigurationDual--
Transistor PolarityPNP--
Typical Input Resistor2.2 kOhms--
Typical Resistor Ratio0.0468--
Mounting StyleSMD/SMT--
Package / CaseSM-6--
DC Collector/Base Gain hfe Min80--
Maximum Operating Frequency200 MHz--
Collector Emitter Voltage VCEO Max- 50 V--
Continuous Collector Current- 100 mA--
Peak DC Collector Current- 100 mA--
Pd Power Dissipation300 mW--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
PackagingReelDigi-ReelR Alternate Packaging-
Emitter Base Voltage VEBO- 5 V--
BrandToshiba--
Channel ModeEnhancement--
Maximum DC Collector Current- 100 mA--
Product TypeBJTs - Bipolar Transistors - Pre-Biased--
Factory Pack Quantity3000--
SubcategoryTransistors--
Series---
Package Case-SC-74, SOT-457-
Mounting Type-Surface Mount-
Supplier Device Package-SM6-
Power Max-300mW-
Transistor Type-2 PNP - Pre-Biased (Dual)-
Current Collector Ic Max-100mA-
Voltage Collector Emitter Breakdown Max-50V-
Resistor Base R1 Ohms-2.2k-
Resistor Emitter Base R2 Ohms-47k-
DC Current Gain hFE Min Ic Vce-80 @ 10mA, 5V-
Vce Saturation Max Ib Ic-300mV @ 250μA, 5mA-
Current Collector Cutoff Max-100nA (ICBO)-
Frequency Transition-200MHz-
Manufacturer Part # Description RFQ
Toshiba
Toshiba
RN2605(TE85L,F) Bipolar Transistors - Pre-Biased SM6 PLN (LF) TRANSISTOR Pd=300mW F=1MHz
RN2605(TE85LF)CT-ND New and Original
RN2605(TE85LF)DKR-ND New and Original
RN2605(TE85LF)TR-ND New and Original
RN2605 New and Original
RN2605(TE85L) New and Original
RN2605/YE New and Original
RN2605TE85LF Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon
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