 |  | | |
| PartNumber | RN2706JE(TE85L,F) | RN2706JE(TE85LF)CT-ND | RN2706JE(TE85LF) |
| Description | Bipolar Transistors - Pre-Biased Gen Trans PNP x 2 ESV, -50V, -100A | ||
| Manufacturer | Toshiba | - | - |
| Product Category | Bipolar Transistors - Pre-Biased | - | - |
| RoHS | Y | - | - |
| Configuration | Dual | - | - |
| Transistor Polarity | PNP | - | - |
| Typical Input Resistor | 4.7 kOhms | - | - |
| Typical Resistor Ratio | 0.1 | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SMV-5 | - | - |
| DC Collector/Base Gain hfe Min | 80 | - | - |
| Maximum Operating Frequency | 200 MHz | - | - |
| Collector Emitter Voltage VCEO Max | 50 V | - | - |
| Continuous Collector Current | 100 mA | - | - |
| Peak DC Collector Current | 100 mA | - | - |
| Pd Power Dissipation | 100 mW | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | RN2706 | - | - |
| Packaging | Reel | - | - |
| Collector Base Voltage VCBO | 50 V | - | - |
| Emitter Base Voltage VEBO | 5 V | - | - |
| Operating Temperature Range | - 55 C to + 150 C | - | - |
| Brand | Toshiba | - | - |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased | - | - |
| Factory Pack Quantity | 4000 | - | - |
| Subcategory | Transistors | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Toshiba |
RN2706JE(TE85L,F) | Bipolar Transistors - Pre-Biased Gen Trans PNP x 2 ESV, -50V, -100A | |
| RN2706JE(TE85L,F) | Bipolar Transistors - Pre-Biased Gen Trans PNP x 2 ESV, -50V, -100A | ||
| RN2706JE(TE85LF)CT-ND | New and Original | ||
| RN2706JE(TE85LF)DKR-ND | New and Original | ||
| RN2706JE(TE85LF) | New and Original |