RN2707J

RN2707JE(TE85L,F) vs RN2707JE vs RN2707JE(TE85L.F)

 
PartNumberRN2707JE(TE85L,F)RN2707JERN2707JE(TE85L.F)
DescriptionBipolar Transistors - Pre-Biased ESV PLN (LF) TRANSISTOR Pd=200mW F=1MHz
ManufacturerToshibaTOSHIBA-
Product CategoryBipolar Transistors - Pre-BiasedTransistors (BJT) - Arrays, Pre-Biased-
ConfigurationDual--
Transistor PolarityPNP--
Typical Input Resistor10 kOhms--
Typical Resistor Ratio0.213--
Mounting StyleSMD/SMT--
Package / CaseESV-5--
DC Collector/Base Gain hfe Min80--
Maximum Operating Frequency200 MHz--
Collector Emitter Voltage VCEO Max- 50 V--
Continuous Collector Current- 100 mA--
Peak DC Collector Current- 100 mA--
Pd Power Dissipation100 mW--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
PackagingReel--
Emitter Base Voltage VEBO- 6 V--
BrandToshiba--
Channel ModeEnhancement--
Maximum DC Collector Current- 100 mA--
Product TypeBJTs - Bipolar Transistors - Pre-Biased--
Factory Pack Quantity4000--
SubcategoryTransistors--
Manufacturer Part # Description RFQ
Toshiba
Toshiba
RN2707JE(TE85L,F) Bipolar Transistors - Pre-Biased ESV PLN (LF) TRANSISTOR Pd=200mW F=1MHz
RN2707JE New and Original
RN2707JETE85L.F New and Original
RN2707JE(TE85LF)CT-ND New and Original
RN2707JE(TE85LF)DKR-ND New and Original
RN2707JE(TE85LF)TR-ND New and Original
RN2707JE(TE85L.F) New and Original
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